STGD4M65DF2

STGD4M65DF2 Datasheet Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT Features 6 s of short-circuit withstand time TAB V = 1.6 V (typ.) I = 4 A CE(sat) C 3 2 Tight parameter distribution 1 Safer paralleling DPAK Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status STGD4M65DF2 Product summary Order code STGD4M65DF2 Marking G4M65DF2 Package DPAK Packing Tape and reel DS11397 - Rev 5 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGD4M65DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 8 A C I C Continuous collector current at T = 100 C 4 A C (1) I Pulsed collector current 16 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 8 A C I F Continuous forward current at T = 100 C 4 A C (1) I Pulsed forward current 16 A FP P Total power dissipation at T = 25 C 68 W TOT C T Storage temperature range - 55 to 150 C STG T Operating junction temperature range - 55 to 175 C J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 2.2 C/W thJC R Thermal resistance junction-case diode 5 C/W thJC R Thermal resistance junction-ambient 100 C/W thJA DS11397 - Rev 5 page 2/20