STGD6NC60H-1 STMicroelectronics

STGD6NC60H-1 N-channel 600 V, 7 A - IPAK Very fast PowerMESH IGBT Datasheet - production data Features I V C TAB CE(sat) Type V CES max 25C 100C STGD6NC60H 600V <2.5V 7A Low on voltage drop (V ) cesat 3 Low C / C ratio (no cross-conduction RES IES 2 susceptibility) 1 High frequency operation IPAK Description Using the latest high voltage technology based on Figure 1. Internal schematic diagram a patented strip layout, STMicroelectronics has C (2 or TAB) designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix H identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced t ) maintaining a low voltage drop. fall G (1) Applications High frequency inverters SMPS and PFC in both hard switch and resonant topologies E (3) Motor drivers Table 1. Device summary Part number Marking Package Packaging STGD6NC60H-1 GD6NC60H IPAK Tube April 2014 DocID025306 Rev 1 1/13 This is information on a product in full production. www.st.comContents STGD6NC60H-1 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuit 9 4 Package mechanical data 10 5 Revision history . 12 2/13 DocID025306 Rev 1