STGF10M65DF2 STMicroelectronics

STGF10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) I = 10 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 C Applications TO-220FP Motor control UPS Figure 1: Internal schematic diagram PFC General purpose inverter C (2) Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series G (1) IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling Sc12850 no tab operation. E (3) Table 1: Device summary Order code Marking Package Packing STGF10M65DF2 G10M65DF2 TO-220FP Tube April 2017 DocID027428 Rev 7 1/17 www.st.com This is information on a product in full production. Contents STGF10M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 TO-220FP package information ...................................................... 14 5 Revision history ............................................................................ 16 2/17 DocID027428 Rev 7