STGFW20V60DF STMicroelectronics

STGFW20V60DF Datasheet Trench gate field-stop IGBT, V series 600 V, 20 A very high speed Features Maximum junction temperature: T = 175 C J Tail-less switching off V = 1.8 V (typ.) I = 20 A CE(sat) C Tight parameter distribution 3 Safe paralleling 2 1 Low thermal resistance TO-3PF Very fast soft recovery antiparallel diode C (2) Applications Photovoltaic inverters Uninterruptible power supply G (1) Welding Power factor correction Very high frequency converters Sc12850 no tab E (3) Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive V temperature CE(sat) coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGFW20V60DF Product summary Order code STGFW20V60DF Marking G20V60DF Package TO-3PF Packing Tube DS10274 - Rev 3 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGFW20V60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 40 A C I C Continuous collector current at T = 100 C 20 A C (1) I Pulsed collector current 80 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 40 A C I F Continuous forward current at T = 100 C 20 A C (1) I Pulsed forward current 80 A FP Insulation withstand voltage (RMS) from all three leads to external heat sink V 3.5 kV ISO (t = 1 s, T = 25 C) C P Total power dissipation at T = 25 C 86.7 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance, junction-to-case IGBT 1.73 R C/W thJC Thermal resistance, junction-to-case diode 2.55 R Thermal resistance, junction-to-ambient 50 C/W thJA DS10274 - Rev 3 page 2/15