X-On Electronics has gained recognition as a prominent supplier of STGFW30V60F IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGFW30V60F IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGFW30V60F STMicroelectronics

STGFW30V60F electronic component of STMicroelectronics
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Part No.STGFW30V60F
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
Datasheet: STGFW30V60F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
600: USD 1.5274 ea
Line Total: USD 916.44 
Availability - 0
MOQ: 600  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 600
Multiples : 1
600 : USD 1.5274
1000 : USD 1.3382

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 7.6931
10 : USD 2.7674
25 : USD 2.6072

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STGFW30V60F from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGFW30V60F and other electronic components in the IGBT Transistors category and beyond.

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STGFW30V60F, STGW30V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Features Maximum junction temperature: T = 175 C J Tail-less switching off V = 1.85 V (typ.) I = 30 A CE(sat) C 111 Tight parameter distribution 3 2 3 1 2 1 Safe paralleling TO-247 TO-3PF Low thermal resistance Applications Photovoltaic inverters C(2, TAB) Uninterruptible power supply Welding Power factor correction G(1) Very high frequency converters Description E(3) G1C2TE3 This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive V temperature CE(sat) coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW30V60F STGW30V60F Product summary Order code STGFW30V60F Marking GFW30V60F Package TO-3PF Packing Tube Order code STGW30V60F Marking GW30V60F Package TO-247 Packing Tube DS9827 - Rev 5 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGFW30V60F, STGW30V60F Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-247 TO-3PF V Collector-emitter voltage (V = 0 V) 600 V CES GE (1) Continuous collector current at T = 25 C 60 60 C I A C (1) Continuous collector current at T = 100 C 30 30 C (2) (1) I Pulsed collector current 120 A 120 CP V Gate-emitter voltage 20 V GE P Total power dissipation at T = 25 C 260 92 W TOT C Insulation withstand voltage (RMS) from all three leads to V 3.5 kV ISO external heat sink (t = 1 s, T = 25 C) C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit TO-247 TO-3PF R Thermal resistance, junction-to-case 0.58 1.63 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS9827 - Rev 5 page 2/17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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