X-On Electronics has gained recognition as a prominent supplier of STGFW40V60DF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGFW40V60DF IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGFW40V60DF STMicroelectronics

STGFW40V60DF electronic component of STMicroelectronics
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Part No.STGFW40V60DF
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: STMicroelectronics IGBT Transistors
Datasheet: STGFW40V60DF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.5828 ea
Line Total: USD 5.58 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 5.5828
10 : USD 3.6542

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the STGFW40V60DF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGFW40V60DF and other electronic components in the IGBT Transistors category and beyond.

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STGFW40V60DF, STGW40V60DF, STGWT40V60DF Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Features Maximum junction temperature: T = 175 C J 111 Tail-less switching off 3 2 V = 1.8 V (typ.) I = 40 A 1 CE(sat) C TO-3PF TAB Tight parameters distribution Safe paralleling 3 Low thermal resistance 3 2 2 1 1 Very fast soft recovery antiparallel diode TO-247 TO-3P C(2, TAB) Applications Welding G(1) Power factor correction UPS Solar inverters Chargers E(3) NG1E3C2T Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW40V60DF STGW40V60DF STGWT40V60DF DS9556 - Rev 11 - February 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGFW40V60DF, STGW40V60DF, STGWT40V60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-247, TO-3P TO-3PF V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 80 A C I C Continuous collector current at T = 100 C 40 A C (1) I Pulsed collector current 160 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 80 A C I F Continuous forward current at T = 100 C 40 A C (1) I Pulsed forward current 160 A FP P Total power dissipation at T = 25 C 283 98.5 W TOT C Insulation withstand voltage (RMS) from all three leads to V 3.5 kV ISO external heat sink (t = 1 s T = 25 C) C T Storage temperature range -55 to 150 C stg T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit TO-247, TO-3P TO-3PF R Thermal resistance, junction-to-case IGBT C/W thJC 0.53 1.52 R Thermal resistance, junction-to-case diode 1.14 1.95 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS9556 - Rev 11 page 2/21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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