STGP6NC60HD STMicroelectronics

STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD Datasheet N-channel 600 V, 7 A, very fast IGBT Features TAB Low V CE(sat) 3 1 2 Low C /C ratio (no cross-conduction susceptibility) D PAK RES IES 3 2 1 Very soft ultra fast recovery antiparallel diode TO-220FP TAB High-frequency operation 3 2 1 Applications TO-220 High-frequency inverters C(2, TAB) SMPS and PFC in both hard switch and resonant topologies Motor drivers G(1) Description Using the latest high-voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH E(3) NG1E3C2T IGBTs characterized by an outstanding performance. The H suffix identifies a family optimized for high-frequency applications which achieve very high switching performances (reduced tfall) while mantaining a low voltage drop. Product status link STGB6NC60HDT4 STGF6NC60HD STGP6NC60HD DS4324 - Rev 6 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 D PAK, TO-220 TO-220FP V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 15 6 C I A C Continuous collector current at 7 3 T = 100 C C (1) I Collector current (pulsed) 21 A CM V Gate-emitter voltage 20 V GE I Diode RMS forward current at T = 25 C 10 A F C P Total power dissipation at T = 25 C 62.5 25 W TOT C Insulation withstand voltage (RMS) from V all three leads to external heat sink (t = 1 2.5 kV ISO s T = 25 C) C T Storage temperature range C STG -55 to 150 T Operating junction temperature range C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit 2 TO-220FP D PAK, TO-220 R Thermal resistance junction-case 2 5 C/W thJC R Thermal resistance junction-ambient 62.5 C/W thJA DS4324 - Rev 6 page 2/24