STGFW20H65FB, STGW20H65FB, STGWT20H65FB Datasheet Trench gate field-stop 650 V, 20 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J 111 High speed switching series 3 2 1 TO-3PF Minimized tail current TAB V = 1.55 V (typ.) I = 20 A CE(sat) C Tight parameters distribution 3 Safe paralleling 2 3 1 2 1 Low thermal resistance TO-247 TO-3P C(2, TAB) Applications Photovoltaic inverters Power factor correction G(1) Welding High-frequency converters Description E(3) G1C2TE3 This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW20H65FB STGW20H65FB STGWT20H65FB DS10546 - Rev 3 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-247, TO-3P TO-3PF V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 40 A C I C Continuous collector current at T = 100 C 20 A C (1) I Pulsed collector current 80 A CP V Gate-emitter voltage 20 V GE Insulation withstand voltage (RMS) from all three leads to V 3.5 kV ISO external heat sink (t = 1 s, T = 25 C) C P Total power dissipation at T = 25 C 168 86.7 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit TO-247, TO-3P TO-3PF R Thermal resistance, junction-to-case 0.9 1.73 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS10546 - Rev 3 page 2/19