X-On Electronics has gained recognition as a prominent supplier of STGW28IH125DF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGW28IH125DF IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGW28IH125DF STMicroelectronics

Name: STGW28IH125DF
Brand: STMicroelectronics
SKU: STGW28IH125DF_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STGW28IH125DF electronic component of STMicroelectronics

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Part No.	STGW28IH125DF
Manufacturer:	STMicroelectronics
Category:	IGBT Transistors
Description:	STMicroelectronics IGBT Transistors 1250V 25A trench gate field-stop IGBT
Datasheet:	STGW28IH125DF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

26: USD 2.505 ea
Line Total: USD 65.13

Availability - 450
Ship by Fri. 21 Mar to Thu. 27 Mar

MOQ: 26 Multiples: 1
Pack Size: 1

STGW28IH125DF More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

51

Ship by Wed. 19 Mar to Fri. 21 Mar

MOQ : 1
Multiples : 1

1 : USD 5.068
3 : USD 4.564
6 : USD 3.486
15 : USD 3.304

450

Ship by Fri. 21 Mar to Thu. 27 Mar

MOQ : 26
Multiples : 1

26 : USD 2.505
29 : USD 2.2303
100 : USD 2.0172
600 : USD 1.6765
1200 : USD 1.6352
3000 : USD 1.6229
5400 : USD 1.602

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

IGBT Transistors IGBT Transistors

RoHS - XON

Y Y

Configuration

Single Single

Collector- Emitter Voltage VCEO Max

1.25 kV 1.25 kV

Collector-Emitter Saturation Voltage

2.65 V 2.65 V

Maximum Gate Emitter Voltage

20 V 20 V

Continuous Collector Current at 25 C

60 A 60 A

Gate-Emitter Leakage Current

250 nA 250 nA

Package / Case

TO - 247 - 3 TO - 247 - 3

Packaging

Tube Tube

Technology

Si Si

Mounting Style

Through Hole Through Hole

Technology

Si Si

Pd - Power Dissipation

375 W 375 W

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Series

900 - 1300V Igbts 900 - 1300V Igbts

Continuous Collector Current Ic Max

30 A 30 A

Brand

Stmicroelectronics Stmicroelectronics

Factory Pack Quantity :

600 600

Cnhts

8541290000 8541290000

Hts Code

8541290075 8541290075

Mxhts

85412999 85412999

Product Type

Igbt Transistors Igbt Transistors

Subcategory

Igbts Igbts

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

STGW28IH125DF Alternative Parts

We are delighted to provide the STGW28IH125DF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGW28IH125DF and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature: T = 175 C J Minimized tail current V = 2.0 V (typ.) I = 25 A CE(sat) C 3 2 Tight parameters distribution 3 1 2 Safe paralleling 1 Low V soft recovery co-packaged diode F TO-247 TO-3P Low thermal resistance Lead free package Applications Figure 1. Internal schematic diagram Induction heating C (2, TAB) Microwave oven Resonant converters Description These IGBTs are developed using an advanced G (1) proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching E (3) application. Table 1. Device summary Order code Marking Package Packaging STGW28IH125DF G28IH125DF TO-247 Tube STGWT28IH125DF G28IH125DF TO-3P Tube February 2014 DocID025268 Rev 2 1/17 This is information on a product in full production. www.st.com 17Contents STGW28IH125DF, STGWT28IH125DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 11 4 Package mechanical data 12 5 Revision history . 16 2/17 DocID025268 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
51 Ship by Wed. 19 Mar to Fri. 21 Mar MOQ : 1 Multiples : 1	1 : USD 5.068 3 : USD 4.564 6 : USD 3.486 15 : USD 3.304

450 Ship by Fri. 21 Mar to Thu. 27 Mar MOQ : 26 Multiples : 1	26 : USD 2.505 29 : USD 2.2303 100 : USD 2.0172 600 : USD 1.6765 1200 : USD 1.6352 3000 : USD 1.6229 5400 : USD 1.602

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Hot	STGW40H60DLFB STMicroelectronics IGBT Transistors 600V 40A trench gate field-stop IGBT Stock : 0 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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