STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 3 Safe paralleling 2 1 DPAK Low thermal resistance TO-220FP Short circuit rated TAB Ultrafast soft recovery antiparallel diode Applications 3 3 Inverter 2 2 1 1 UPS TO-220 TO-247 PFC Figure 1. Internal schematic diagram Description C (2, TAB) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high G (1) frequency converters. Furthermore, a positive V temperature coefficient and very tight CE(sat) parameter distribution result in easier paralleling operation. E (3) Table 1. Device summary Order codes Marking Package Packaging STGB30H60DF GB30H60DF DPAK Tape and reel STGF30H60DF GF30H60DF TO-220FP STGP30H60DF GP30H60DF TO-220 Tube STGW30H60DF GW30H60DF TO-247 March 2013 DocID022363 Rev 3 1/24 This is information on a product in full production. www.st.com 24Contents STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 7 3 Test circuits 11 4 Package mechanical data 12 5 Packaging mechanical data 20 6 Revision history . 23 2/24 DocID022363 Rev 3