STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB Features TAB Maximum junction temperature: T = 175 C J Tail-less switching off 3 3 2 1 V = 1.85 V (typ.) I = 30 A 1 CE(sat) C DPAK TO-220 Tight parameters distribution TAB Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode 3 3 2 2 1 1 TO-3P TO-247 Applications Photovoltaic inverters Figure 1. Internal schematic diagram Uninterruptible power supply C (2, TAB) Welding Power factor correction Very high frequency converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to E (3) maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order codes Marking Package Packaging STGB30V60DF GB30V60DF DPAK Tape and reel STGP30V60DF GP30V60DF TO-220 Tube STGW30V60DF GW30V60DF TO-247 Tube STGWT30V60DF GWT30V60DF TO-3P Tube October 2013 DocID024361 Rev 4 1/22 This is information on a product in full production. www.st.com 22Electrical ratings STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 600 V CES GE I Continuous collector current at T = 25 C 60 A C C I Continuous collector current at T = 100 C 30 A C C (1) I Pulsed collector current 120 A CP V Gate-emitter voltage 20 V GE I Continuous forward current at T = 25 C 60 A F C I Continuous forward current at T = 100 C 30 A F C (1) I Pulsed forward current 120 A FP P Total dissipation at T = 25 C 258 W TOT C T Storage temperature range - 55 to 150 C STG T Operating junction temperature - 55 to 175 C J 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.58 C/W thJC R Thermal resistance junction-case diode 2.08 C/W thJC R Thermal resistance junction-ambient 50 C/W thJA 2/22 DocID024361 Rev 4