STGP30V60F STMicroelectronics

STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J TAB Tail-less switching off TAB V = 1.85 V (typ.) I = 30 A CE(sat) C Tight parameters distribution Safe paralleling 3 3 1 2 1 Low thermal resistance 2 D PAK TO-220 Applications Photovoltaic inverters Uninterruptible power supply Figure 1. Internal schematic diagram Welding C (2, TAB) Power factor correction Very high frequency converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency E (3) converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order codes Marking Package Packaging 2 STGB30V60F GB30V60F D PAK Tape and reel STGP30V60F GP30V60F TO-220 Tube April 2014 DocID025049 Rev 4 1/19 This is information on a product in full production. www.st.com 19Contents STGB30V60F, STGP30V60F Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 10 4 Package mechanical data 11 4.1 DPAK, STGB30V60F 11 4.2 TO-220, STGP30V60F . 14 5 Packaging mechanical data 16 6 Revision history . 18 2/19 DocID025049 Rev 4