STGW20IH125DF STMicroelectronics

STGW20IH125DF STGWT20IH125DF 1250 V, 20 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature: T = 175 C J Minimized tail current V = 2.0 V (typ.) I = 15 A CE(sat) C 3 2 Tight parameters distribution 3 1 2 Safe paralleling 1 Very low V soft recovery co-packaged diode F TO-247 TO-3P Low thermal resistance Lead free package Applications Figure 1. Internal schematic diagram Induction heating C (2, TAB) Microwave oven Resonant converters Description These IGBTs are developed using an advanced G (1) proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize E (3) efficiency for any resonant and soft-switching application. Table 1. Device summary Order code Marking Package Packaging STGW20IH125DF G20IH125DF TO-247 Tube STGWT20IH125DF G20IH125DF TO-3P Tube February 2014 DocID025269 Rev 2 1/17 This is information on a product in full production. www.st.com 17Contents STGW20IH125DF, STGWT20IH125DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 11 4 Package mechanical data 12 5 Revision history . 16 2/17 DocID025269 Rev 2