STGW25H120F2 STMicroelectronics

STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) I = 25 A CE(sat) C 5 s minimum short circuit withstand time at T =150 C J Tight parameters distribution 2 7 2 ORQJ OHDGV 7 Safe paralleling Low thermal resistance Applications Figure 1. Internal schematic diagram C (2) Uninterruptible power supply Welding machines Photovoltaic inverters Power factor correction High frequency converters G (1) Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series SC12850 E (3) of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive V temperature coefficient CE(sat) and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW25H120F2 G25H120F2 TO-247 Tube STGWA25H120F2 G25H120F2 TO-247 long leads Tube March 2015 DocID026003 Rev 4 1/17 This is information on a product in full production. www.st.com 17Contents STGW25H120F2, STGWA25H120F2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 11 4 Package information 12 4.1 TO-247, package information 12 4.2 TO-247 long leads, package information . 14 5 Revision history . 16 2/17 DocID026003 Rev 4