X-On Electronics has gained recognition as a prominent supplier of STGP10NB60S IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGP10NB60S IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGP10NB60S STMicroelectronics

Name: STGP10NB60S
Brand: STMicroelectronics
SKU: STGP10NB60S_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGP10NB60S electronic component of STMicroelectronics

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Part No.	STGP10NB60S
Manufacturer:	STMicroelectronics
Category:	IGBT Transistors
Description:	IGBT Transistors N-Ch 600 Volt 10 Amp
Datasheet:	STGP10NB60S Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 1.3936 ea
Line Total: USD 69.68

Availability - 0

MOQ: 50 Multiples: 50
Pack Size: 50

STGP10NB60S More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 31 Dec to Mon. 06 Jan MOQ : 1000 Multiples : 1000	1000 : USD 1.8956 2000 : USD 1.8878 3000 : USD 1.8798 4000 : USD 1.8718 5000 : USD 1.8637 10000 : USD 1.8554 20000 : USD 1.8471 25000 : USD 1.8386 50000 : USD 1.8301

0 Ship by Tue. 31 Dec to Mon. 06 Jan MOQ : 50 Multiples : 50	50 : USD 1.3936 200 : USD 1.342 750 : USD 1.2904 1250 : USD 1.2904 2500 : USD 1.2904

0 Ship by Tue. 31 Dec to Mon. 06 Jan MOQ : 1000 Multiples : 1000	1000 : USD 1.251

0 Ship by Fri. 27 Dec to Tue. 31 Dec MOQ : 1 Multiples : 1	1 : USD 6.0164 10 : USD 2.1659 25 : USD 2.0456

We are delighted to provide the STGP10NB60S from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGP10NB60S and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

STGB10NB60S STGP10NB60S 16 A, 600 V, low drop IGBT Features Low on-voltage drop (V ) CE(sat) High current capability TAB TAB Applications 3 Light dimmer 3 1 2 1 Static relays 2 D PAK TO-220 Motor drive Description This IGBT utilizes the advanced PowerMESH process featuring extremely low on-state voltage Figure 1. Internal schematic diagram drop in low-frequency working conditions (up to 1 kHz). Table 1. Device summary Order codes Marking Package Packaging 2 STGB10NB60ST4 GB10NB60S D PAK Tape and reel STGP10NB60S GP10NB60S TO-220 Tube September 2011 Doc ID 10985 Rev 4 1/19 www.st.com 19Contents STGB10NB60S, STGP10NB60S Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 9 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 18 2/19 Doc ID 10985 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

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SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 600 V 600 V
Collector-Emitter Saturation Voltage 1.7 V 1.7 V
Maximum Gate Emitter Voltage +/- 20 V +/- 20 V
Continuous Collector Current at 25 C 20 A 20 A
Gate-Emitter Leakage Current +/- 100 nA +/- 100 nA
Power Dissipation 80 W 80 W
Package / Case TO - 220 - 3 TO - 220 - 3
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 80 W 80 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Series Stgp10nb60s Stgp10nb60s
Continuous Collector Current Ic Max 20 A 20 A
Brand Stmicroelectronics Stmicroelectronics
Factory Pack Quantity : 50 50
Height 9.15 mm 9.15 mm
Length 10.4 mm 10.4 mm
Width 4.6 mm 4.6 mm
Cnhts 8541210000 8541210000
Hts Code 8541290095 8541290095
Mxhts 85412101 85412101
Product Type Igbt Transistors Igbt Transistors
Subcategory Igbts Igbts
Taric 8541210000 8541210000