Product Information

STGP15M120F3

STGP15M120F3 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop 1200 V 15 A low-loss M series IGBT in a TO-220 package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.6731 ea
Line Total: USD 7.67

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STGP15M120F3
STMicroelectronics

1 : USD 7.6731
10 : USD 5.0234
25 : USD 4.7449
100 : USD 4.1182
500 : USD 3.5015
1000 : USD 3.0539

     
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
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STGP15M120F3 Datasheet Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package Features 10 s of minimum short-circuit withstand time TAB V = 1.85 V (typ.) I = 15 A CE(sat) C Tight parameter distribution Positive V temperature coefficient 3 CE(sat) 2 1 Low thermal resistance TO-220 Maximum junction temperature: T = 175 C J Applications C(2, TAB) Industrial drives UPS G(1) Solar Welding E(3) Description G1C2TE3 This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGP15M120F3 Product summary Order code STGP15M120F3 Marking G15M120F3 Package TO-220 Packing Tube DS11255 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGP15M120F3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 1200 V CES GE Continuous collector current at T = 25 C 30 A C I C Continuous collector current at T = 100 C 15 A C (1) I Pulsed collector current 60 A CP V Gate-emitter voltage 20 V GE P Total dissipation at T = 25 C 259 W TOT C T Storage temperature range -55 to 150 C stg T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.58 thJC C/W R Thermal resistance junction-ambient 62.5 thJA DS11255 - Rev 3 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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