STGP15M120F3 STMicroelectronics

STGP15M120F3 Datasheet Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package Features 10 s of minimum short-circuit withstand time TAB V = 1.85 V (typ.) I = 15 A CE(sat) C Tight parameter distribution Positive V temperature coefficient 3 CE(sat) 2 1 Low thermal resistance TO-220 Maximum junction temperature: T = 175 C J Applications C(2, TAB) Industrial drives UPS G(1) Solar Welding E(3) Description G1C2TE3 This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGP15M120F3 Product summary Order code STGP15M120F3 Marking G15M120F3 Package TO-220 Packing Tube DS11255 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGP15M120F3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 1200 V CES GE Continuous collector current at T = 25 C 30 A C I C Continuous collector current at T = 100 C 15 A C (1) I Pulsed collector current 60 A CP V Gate-emitter voltage 20 V GE P Total dissipation at T = 25 C 259 W TOT C T Storage temperature range -55 to 150 C stg T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.58 thJC C/W R Thermal resistance junction-ambient 62.5 thJA DS11255 - Rev 3 page 2/15