X-On Electronics has gained recognition as a prominent supplier of RGT8NL65DGTL IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGT8NL65DGTL IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGT8NL65DGTL ROHM

RGT8NL65DGTL electronic component of ROHM
RGT8NL65DGTL ROHM
RGT8NL65DGTL IGBT Transistors
RGT8NL65DGTL Semiconductors

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See Product Specifications
Part No. RGT8NL65DGTL
Manufacturer: ROHM
Category: IGBT Transistors
Description: IGBT Trench Field Stop 650 V 8 A 65 W Surface Mount LPDS
Datasheet: RGT8NL65DGTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.15 ea
Line Total: USD 2.15 
Availability - 952
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1

 RGT8NL65DGTL More Buying Options & Price Grid(s)

Availability Price Quantity
952
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 2.15
10 : USD 1.668
100 : USD 1.133
500 : USD 0.9724
1000 : USD 0.935
10000 : USD 0.9339

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RGT8NL65DGTL from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGT8NL65DGTL and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGT8NL65D 650V 4A Field Stop Trench IGBT Datasheet Outline LPDL (TO-263L) V 650V (2) CES I 4A C(100C) (1) V 1.65V CE(sat) (Typ.) (3) P 65W D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Taping Applications General Inverter Reel Size (mm) 330 UPS Tape Width (mm) 24 Type Power Conditioner Basic Ordering Unit (pcs) 1,000 Welder Packing Code TL Marking RGT8NL65D Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 8A C C Collector Current T = 100C I 4A C C *1 12 A Pulsed Collector Current I CP T = 25C I 7A C F Diode Forward Current T = 100C I 4A C F *1 Diode Pulsed Forward Current 12 A I FP T = 25C P 65 W C D Power Dissipation T = 100C P 32 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 1/11Datasheet RGT8NL65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 2.30 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 8.70 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 -- V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current -- 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 2.8mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 4A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.1 V CE(sat) j Voltage T = 175C - 2.1 - j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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