X-On Electronics has gained recognition as a prominent supplier of RGT16NL65DGTL IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGT16NL65DGTL IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGT16NL65DGTL ROHM

Name: RGT16NL65DGTL
Brand: ROHM
SKU: RGT16NL65DGTL_ROHM
Availability: InStock
Rating: 5 (11 reviews)

RGT16NL65DGTL electronic component of ROHM

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Part No.	RGT16NL65DGTL
Manufacturer:	ROHM
Category:	IGBT Transistors
Description:	IGBT Transistors FIELD STOP TRENCH IGBT
Datasheet:	RGT16NL65DGTL Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.398 ea
Line Total: USD 2.4

Availability - 857
Ship by Tue. 26 Nov to Thu. 28 Nov

MOQ: 1 Multiples: 1
Pack Size: 1

RGT16NL65DGTL More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

857

Ship by Tue. 26 Nov to Thu. 28 Nov

MOQ : 1
Multiples : 1

1 : USD 2.398
10 : USD 1.837
100 : USD 1.408
500 : USD 1.243
1000 : USD 1.188
10000 : USD 1.177

We are delighted to provide the RGT16NL65DGTL from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGT16NL65DGTL and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGT16NL65D 650V 8A Field Stop Trench IGBT Datasheet Outline LPDL (TO-263L) V 650V CES (2) I 8A C(100C) V 1.65V CE(sat) (Typ.) (1) (3) P 94W D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Taping Applications General Inverter Reel Size (mm) 330 UPS Tape Width (mm) 24 Type Power Conditioner Basic Ordering Unit (pcs) 1,000 Welder Packing Code TL RGT16NL65D Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 16 A C C Collector Current T = 100C I 8A C C *1 24 A Pulsed Collector Current I CP T = 25C I 16 A C F Diode Forward Current T = 100C I 8A C F *1 Diode Pulsed Forward Current 24 A I FP T = 25C P 94 W C D Power Dissipation T = 100C P 47 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 1/11Datasheet RGT16NL65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 1.58 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 3.60 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 -- V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current -- 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 5.5mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 8A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.1 V CE(sat) j Voltage T = 175C - 2.15 - j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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RGT16NL65DGTL ROHM

RGT16NL65DGTL More Buying Options & Price Grid(s)

Specifications

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Availability	Price	Buy Price	Quantity
857 Ship by Tue. 26 Nov to Thu. 28 Nov MOQ : 1 Multiples : 1	1 : USD 2.398 10 : USD 1.837 100 : USD 1.408 500 : USD 1.243 1000 : USD 1.188 10000 : USD 1.177

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