X-On Electronics has gained recognition as a prominent supplier of RGCL80TS60DGC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGCL80TS60DGC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGCL80TS60DGC11 ROHM

Name: RGCL80TS60DGC11
Brand: ROHM
SKU: RGCL80TS60DGC11_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RGCL80TS60DGC11 electronic component of ROHM

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See Product Specifications

Part No.	RGCL80TS60DGC11
Manufacturer:	ROHM
Category:	IGBT Transistors
Description:	IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
Datasheet:	RGCL80TS60DGC11 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 6.269 ea
Line Total: USD 6.27

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

RGCL80TS60DGC11 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 07 Jan to Mon. 13 Jan MOQ : 1 Multiples : 1	1 : USD 10.7341 10 : USD 9.2904 100 : USD 7.6124 500 : USD 6.4803 1000 : USD 5.5242

0 Ship by Fri. 03 Jan to Tue. 07 Jan MOQ : 1 Multiples : 1	1 : USD 6.269 10 : USD 4.1096 30 : USD 3.8796 120 : USD 3.3568 510 : USD 2.8548 1020 : USD 2.3528 2520 : USD 2.2692

0 Ship by Fri. 03 Jan to Tue. 07 Jan MOQ : 1 Multiples : 1	1 : USD 4.3357 5 : USD 3.9021 6 : USD 2.8905 15 : USD 2.7328

We are delighted to provide the RGCL80TS60DGC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGCL80TS60DGC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGCL80TS60D 665000VV 3 400AA Fie Field Sld Stotop Trep Trench nch IGIGBTBT Data Sheet lOutline TO-247N V 600V CES I 40A C(100C) V 1.4V CE(sat) (Typ.) P 148W (1)(2) (3) D lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Soft Switching (2) Collector *1 3) Built in Very Fast & Soft Recovery FRD (3) Emitter (1) (RFN - Series) *1 Built in FRD (3) 4) Pb - free Lead Plating RoHS Compliant lPackaging Specifications Packaging Tube lApplications Partial Switching PFC Reel Size (mm) - Discharge Circuit Tape Width (mm) - Type Brake for Inverter Basic Ordering Unit (pcs) 450 Taping Code C11 Marking RGCL80TS60D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 600 V CES Gate - Emitter Voltage V V 30 GES T = 25C I 65 A C C Collector Current T = 100C I 40 A C C *1 Pulsed Collector Current 160 A I CP T = 25C I 35 A C F Diode Forward Current T = 100C I 20 A C F *1 Diode Pulsed Forward Current 100 A I FP T = 25C P 148 W C D Power Dissipation T = 100C P 74 W C D Operating Junction Temperature T C -40 to +175 j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.09 - Rev.A 1/11Data Sheet RGCL80TS60D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 1.01 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 2.28 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 600 - - V CES C GE Voltage I V = 600V, V = 0V Collector Cut - off Current - - 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 30.0mA 4.5 5.5 6.5 V GE(th) CE C Voltage I = 40A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.4 1.8 V CE(sat) j Voltage T = 175C - 1.6 - j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.09 - Rev.A 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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