X-On Electronics has gained recognition as a prominent supplier of RGPR10BM40FHTL IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGPR10BM40FHTL IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGPR10BM40FHTL ROHM

RGPR10BM40FHTL electronic component of ROHM
RGPR10BM40FHTL ROHM
RGPR10BM40FHTL IGBT Transistors
RGPR10BM40FHTL  Semiconductors

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See Product Specifications
Part No. RGPR10BM40FHTL
Manufacturer: ROHM
Category: IGBT Transistors
Description: IGBT Transistors 430V 20A 1.6V Vce Ignition IGBT
Datasheet: RGPR10BM40FHTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.0778 ea
Line Total: USD 2.08 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 2.0778
10 : USD 1.7596
25 : USD 1.701
100 : USD 1.4312
500 : USD 1.1599
1000 : USD 1.0011
2500 : USD 0.9775

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Qualification
Package / Case
Packaging
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RGPR10BM40FHTL from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGPR10BM40FHTL and other electronic components in the IGBT Transistors category and beyond.

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RGPR10BM40FH 430V 20A Ignition IGBT Datasheet Outline TO-252 BV 43030V CES (2) I 20A C (1) V 1.6V CE(sat) (Typ.) (3) E 250mJ AS Features Inner Circuit (2) 1) Low Collector - Emitter Saturation Voltage (1) Gate 2) High Self-Clamped Inductive Switching Energy (2) Collector (1) 3) Built in Gate-Emitter Protection Diode (3) Emitter 4) Built in Gate-Emitter Resistance 5) Qualified to AEC-Q101 (3) 6) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Taping Reel Size (mm) 330 Applications Ignition Coil Driver Circuits Tape Width (mm) 16 Type Solenoid Driver Circuits Basic Ordering Unit (pcs) 2,500 Packing Code TL RGPR10BM40 Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 460 V CES Emitter-Collector Voltage (V = 0V) V 25 V GE EC Gate - Emitter Voltage V V 10 GE I Collector Current 20 A C T = 25C E mJ 250 j AS Avalanche Energy (Single Pulse) *2 T = 150C 150 mJ E j AS P Power Dissipation 107 W D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.A 1/8Data Sheet RGPR10BM40FH Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal Resistance Junction - Case R - - 1.40 C/W (j-c) Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. I = 2mA, V = 0V C GE Collector - Emitter Breakdown BV T = 25C 400 430 460 V CES j Voltage *2 T = 40 to 175C 395 - 465 V j Emitter - Collector Breakdown BV I = 10mA, V = 0V 25 35 - V EC C GE Voltage Gate - Emitter Breakdown BV I = 5mA, V = 0V - 17 V 12 GES G CE Voltage V = 300V, V = 0V CE GE I T = 25C Collector Cut - off Current -- 7 A CES j *2 - - 100 A T = 150C j Gate - Emitter Leakage Current I V = 10V, V = 0V mA 0.4 0.6 1.2 GES GE CE V = 5V, I = 10mA CE C Gate - Emitter Threshold V T = 25C 1.3 1.7 2.1 V GE(th) j Voltage T = 150C - 1.3 - V j I = 10A, V = 5V C GE Collector - Emitter Saturation V T = 25C - 1.60 2.00 V CE(sat) j Voltage T = 150C - 1.80 - V j I = 4A, V = 4.5V C GE Collector - Emitter Saturation V T = 25C - 1.17 1.50 V CE(sat) j Voltage T = 150C - 1.13 - V j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.A 2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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