Preliminary Technical Information TM XPT 650V IGBT V = 650V IXYP10N65C3D1 CES TM GenX3 w/Diode I = 10A C110 V 2.50V CE(sat) t = 23ns fi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 650 V CES J C Tab E V T = 25C to 175C, R = 1M 650 V CGR J GE V Continuous 20 V GES G = Gate C = Collector V Transient 30 V GEM E = Emitter Tab = Collector I T = 25C 30 A C25 C I T = 110C 10 A C110 C I T = 110C 9 A F110 C I T = 25C, 1ms 54 A CM C Features I T = 25C 5 A A C Optimized for 20-60kHz Switching E T = 25C 50 mJ AS C Square RBSOA SSOA V = 15V, T = 150C, R = 50 I = 20 A Avalanche Rated GE VJ G CM (RBSOA) Clamped Inductive Load V V Anti-Parallel Fast Diode CE CES Short Circuit Capability t V = 15V, V = 360V, T = 150C 8 s sc GE CE J International Standard Package (SCSOA) R = 150, Non Repetitive G P T = 25C 160 W C C Advantages T -55 ... +175 C J High Power Density T 175 C JM Extremely Rugged T -55 ... +175 C stg Low Gate Drive Requirement T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Applications M Mounting Torque 1.13/10 Nm/lb.in. d Power Inverters Weight 2.5 g UPS Motor Drives Symbol Test Conditions Characteristic Values SMPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. PFC Circuits J Battery Chargers BV I = 250 A, V = 0V 650 V CES C GE Welding Machines V I = 250 A, V = V 3.5 6.0 V GE(th) C CE GE Lamp Ballasts High Frequency Power Inverters I V = V , V = 0V 10 A CES CE CES GE T = 150C 200 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 10A, V = 15V, Note 1 2.27 2.50 V CE(sat) C GE T = 150C 2.54 V J 2016 IXYS CORPORATION, All Rights Reserved DS100600C(6/16)IXYP10N65C3D1 Symbol Test Conditions Characteristic Values TO-220 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 10A, V = 10V, Note 1 3.8 6.2 S fs C CE C 423 pF ies C V = 25V, V = 0V, f = 1MHz 42 pF oes CE GE C 10 pF res Q 18 nC g(on) Q I = 10A, V = 15V, V = 0.5 V 4 nC ge C GE CE CES Q 8 nC gc t 20 ns d(on) t 26 ns Inductive load, T = 25C ri J E 0.24 mJ I = 10A, V = 15V Pins: 1 - Gate 2 - Collector on C GE 3 - Emitter t 77 ns V = 400V, R = 50 d(off) CE G t 23 ns fi Note 2 E 0.11 0.17 mJ f of t 17 ns d(on) Inductive load, T = 150C t 27 ns J ri I = 10A, V = 15V E 0.44 mJ C GE on V = 400V, R = 50 t 90 ns CE G d(off) t 38 ns Note 2 fi E 0.15 mJ off R 0.94 C/W thJC R 0.50 C/W thCS Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 10A, V = 0V, Note 1 2.5 V F F GE T = 150C 1.5 V J I 6.3 A RM I = 10A, V = 0V, F GE -di /dt = 200A/s, V = 400V, T = 150C F R J t 170 ns rr R 2.30 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537