TM XPT 650V IGBT V = 650V IXXH40N65B4H1 CES TM GenX4 w/ Sonic I = 40A C110 Diode V 2.0V CE(sat) t = 40ns fi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C 123 A C25 C G = Gate C = Collector I T = 110C 40 A C110 C E = Emitter Tab = Collector I T = 110C 40 A F110 C I T = 25C, 1ms 225 A CM C SSOA V = 15V, T = 150C, R = 10 I = 80 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features t V = 15V, V = 360V, T = 150C 10 s sc GE CE J (SCSOA) R = 82, Non Repetitive G Optimized for 5-30kHz Switching Square RBSOA P T = 25C 455 W C C Anti-Parallel Sonic Diode T -55 ... +175 C J Avalanche Rated T 175 C Short Circuit Capability JM International Standard Package T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C Advantages SOLD M Mounting Torque 1.13/10 Nm/lb.in d High Power Density Weight 6g Extremely Rugged Low Gate Drive Requirement Applications Power Inverters UPS Symbol Test Conditions Characteristic Values Motor Drives (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J SMPS BV I = 250 A, V = 0V 650 V CES C GE PFC Circuits Battery Chargers V I = 250 A, V = V 4.0 6.5 V GE(th) C CE GE Welding Machines I V = V , V = 0V 25 A CES CE CES GE Lamp Ballasts T = 150C 3 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 40A, V = 15V, Note 1 1.60 2.00 V CE(sat) C GE T = 150C 1.87 V J 2016 IXYS CORPORATION, All Rights Reserved DS100544C(10/16)IXXH40N65B4H1 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 40A, V = 10V, Note 1 14 23 S fs C CE C 2110 pF ies C V = 25V, V = 0V, f = 1MHz 200 pF P oes CE GE 1 2 3 C 33 pF res Q 66 nC g(on) Q I = 40A, V = 15V, V = 0.5 V 16 nC ge C GE CE CES Q 27 nC gc t 19 ns e d(on) t 48 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitted E 1.40 mJ I = 40A, V = 15V on C GE Dim. Millimeter Inches t 112 ns V = 400V, R = 5 d(off) CE G Min. Max. Min. Max. t 40 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 0.75 mJ 1 f of A 2.2 2.6 .059 .098 2 t 17 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 150C t 44 ns J ri b 2.87 3.12 .113 .123 2 I = 40A, V = 15V E 2.20 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 400V, R = 5 t 134 ns CE G d(off) E 15.75 16.26 .610 .640 t 73 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 1.40 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.33 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 30A, V = 0V, Note 1 2.5 V F F GE T = 150C 2.15 V J I 25 A RM I = 30A, V = 0V, T = 150C F GE J t 120 ns rr -di /dt = 500A/s, V = 300V F R R 0.60 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537