Advance Technical Information TM High Voltage XPT IGBT V = 4500V IXYF30N450 CES I = 17A C110 V 3.9V CE(sat) (Electrically Isolated Tab) TM ISOPLUS i4-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 4500 V CES C V T = 25C to 150C, R = 1M 4500 V CGR J GE V Continuous 20 V GES 1 2 V Transient 30 V Isolated Tab GEM 5 I T = 25C 23 A C25 C 1 = Gate 5 = Collector I T = 110C 17 A C110 C 2 = Emitter I T = 25C, 1ms 190 A CM C SSOA V = 15V, T = 125C, R = 15 I = 90 A GE VJ G CM (RBSOA) Clamped Inductive Load 3600 V P T = 25C 230 W C C Features T -55 ... +150 C J Silicon Chip on Direct-Copper Bond T 150 C JM (DCB) Substrate T -55 ... +150 C stg Isolated Mounting Surface 4000V~ Electrical Isolation T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10 seconds 260 C High Blocking Voltage SOLD High Peak Current Capability F Mounting Force 20..120 / 4.5..27 Nm/lb.in. C Low Saturation Voltage V 50/60Hz, 1 Minute 4000 V~ ISOL Weight 5 g Advantages Low Gate Drive Requirement High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV I = 250A, V = 0V 4500 V Switch-Mode and Resonant-Mode CES C GE Power Supplies V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE Uninterruptible Power Supplies (UPS) I V = V , V = 0V 25 A CES CE CES GE Laser Generators Note 2, T = 100C 100 A J Capacitor Discharge Circuits I V = 0V, V = 25V 200 nA AC Switches GES CE GE V I = 30A, V = 15V, Note 1 3.2 3.9 V CE(sat) C GE T = 125C 4.5 V J 2013 IXYS CORPORATION, All Rights Reserved DS100569(11/13) IXYF30N450 Symbol Test Conditions Characteristic Values TM ISOPLUS i4-Pak (HV) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 11 18 S fS C CE C 1840 pF ies C V = 25V, V = 0V, f = 1MHz 83 pF oes CE GE C 35 pF res Q 88 nC g Q I = 30A, V = 15V, V = 1000V 11 nC ge C GE CE Q 40 nC gc t 38 ns d(on) Resistive Switching Times, T = 25C J t 318 ns r Pin 1 = Gate I = 30A, V = 15V Pin2 = Emitter C GE t 168 ns Pin 3 = Collector d(off) Tab 4 = Isolated V = 960V, R = 15 CE G t 1220 ns f t 42 ns d(on) Resistive Switching Times, T = 125C J t 590 ns r I = 30A, V = 15V C GE t 180 ns d(off) V = 960V, R = 15 CE G t 1365 ns f R 0.54 C/W thJC R 0.15 C/W thCS Notes: 1. Pulse test, t < 300 s, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537