TM 1200V XPT IGBT V = 1200V IXYR50N120C3D1 CES TM GenX3 w/ Diode I = 32A C90 V 3.5V CE(sat) (Electrically Isolated Tab) t = 43ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TM ISOPLUS247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE V Continuous 20 V GES G V Transient 30 V GEM C Isolated Tab E I T = 25C (Chip Capability) 56 A C25 C I T = 90C 32 A C90 C I T = 110C 18 A F110 C G = Gate C = Collector I T = 25C, 1ms 210 A E = Emitter CM C SSOA V = 15V, T = 150C, R = 5 I = 100 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 290 W C C Features T -55 ... +150 C J T 150 C Silicon Chip on Direct-Copper Bond JM (DCB) Substrate T -55 ... +150 C stg Isolated Mounting Surface T Maximum Lead Temperature for Soldering 300 C L 2500V~ Electrical Isolation T 1.6 mm (0.062in.) from Case for 10s 260 C Optimized for Low Switching Losses SOLD Square RBSOA V 50/60 Hz, 1 Minute 2500 V~ ISOL Positive Thermal Coefficient of F Mounting Force 20..120/4.5..27 N/lb. Vce(sat) C Anti-Parallel Ultra Fast Diode Weight 5 g High Current Handling Capability International Standard Package Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Low Gate Drive Requirement J BV I = 250 A, V = 0V 1200 V CES C GE V I = 250 A, V = V 3.0 5.0 V Applications GE(th) C CE GE I V = V , V = 0V 50 A CES CE CES GE High Frequency Power Inverters T = 125C 500 A J UPS Motor Drives I V = 0V, V = 20V 100 nA GES CE GE SMPS V I = 50A, V = 15V, Note 1 3.5 V PFC Circuits CE(sat) C GE T = 150C 4.2 V Battery Chargers J Welding Machines Lamp Ballasts 2016 IXYS CORPORATION, All Rights Reserved DS100492B(3/16)IXYR50N120C3D1 Symbol Test Conditions Characteristic Values ISOPLUS247 (IXYR) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 50A, V = 10V, Note 1 20 32 S fs C CE C 3100 pF ies C V = 25V, V = 0V, f = 1MHz 230 pF oes CE GE C 66 pF res Q 142 nC g(on) Q I = 50A, V = 15V, V = 0.5 V 23 nC ge C GE CE CES Q 60 nC gc t 28 ns d(on) t 62 ns Inductive load, T = 25C ri J E 3.0 mJ I = 50A, V = 15V on C GE t 133 ns V = 0.5 V , R = 5 d(off) CE CES G t 43 ns fi Note 2 E 1.0 1.7 mJ f of t 28 ns d(on) Inductive load, T = 150C t 68 ns J ri I = 50A, V = 15V E 6.0 mJ C GE on V = 0.5 V , R = 5 t 160 ns CE CES G d(off) t 60 ns Note 2 fi E 1.4 mJ off R 0.43 C/W thJC R 0.15 C/W thCS 1 - Gate 2,4 - Collector Reverse Diode (FRED) 3 - Emiiter (T = 25C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 3.00 V F I = 30A,V = 0V, Note 1 F GE T = 150C 1.75 V J I 9 A RM I = 30A,V = 0V, -di /dt = 100A/ s, T = 100C F GE F J t V = 600V 195 nsT = 100C rr R J R 1.10 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537