Advance Technical Information V = 2500V High Voltage IXYT25N250CHV CES TM I = 25A XPT IGBT IXYH25N250CHV C110 V 4.0V CE(sat) t = 246ns fi(typ) TO-268HV (IXYT) G E C (Tab) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 2500 V TO-247HV (IXYH) CES J V T = 25C to 175C, R = 1M 2500 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C 95 A C25 C I T = 110C 25 A G C110 C E I T = 25C, 1ms 235 A CM C C (Tab) C SSOA V = 15V, T = 150C, R = 5 I = 100 A GE VJ G CM (RBSOA) Clamped Inductive Load 1500 V G = Gate C = Drain E = Source Tab = Drain P T = 25C 937 W C C T -55 ... +175 C J T 175 C JM T -55 ... +175 C stg Features T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD High Voltage Package M Mounting Torque 1.13/10 Nm/lb.in High Blocking Voltage d High Peak Current Capability Weight TO-268HV 4 g Low Saturation Voltage TO-247HV 6 g Advantages Low Gate Drive Requirement High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250A, V = 0V 2500 V CES C GE Applications V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE Switch-Mode and Resonant-Mode I V = V , V = 0V 25 A Power Supplies CES CE CES GE T = 100C 100 A Uninterruptible Power Supplies (UPS) J Laser Generators I V = 0V, V = 20V 100 nA GES CE GE Capacitor Discharge Circuits V I = 25A, V = 15V, Note 1 3.4 4.0 V AC Switches CE(sat) C GE T = 150C 4.7 V J 2016 IXYS CORPORATION, All Rights Reserved DS100762A(12/16)IXYT25N250CHV IXYH25N250CHV Symbol Test Conditions Characteristic Values TO-268HV Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. E A E1 J L2 C2 g I = 25A, V = 10V, Note 1 16 27 S fs C CE 3 D1 3 D H D2 R Gate Input Resistance 2.8 Gi 1 2 D3 2 1 A1 L4 C 3060 pF ies C e e b C V = 25V, V = 0V, f = 1MHz 114 pF oes CE GE C 43 pF res PINS: 1 - Gate 2 - Emitter Q 147 nC g(on) 3 - Collector Q I = 25A, V = 15V, V = 0.5 V 16 nC ge C GE CE CES L3 Q 68 nC A2 gc L t 15 ns d(on) t Inductive load, T = 25C 34 ns ri J E I = 25A, V = 15V 8.3 mJ on C GE t V = 0.5 V , R = 5 230 ns d(off) CE CES G t 246 ns fi Note 2 E 7.3 mJ off t 18 ns d(on) Inductive load, T = 150C t 33 ns J ri I = 25A, V = 15V E 11.0 mJ C GE on t 225 ns V = 0.5 V , R = 5 d(off) CE CES G t 350 ns fi Note 2 E 10.5 mJ off R 0.16 C/W thJC R 0.15 C/W thCS TO-247HV Outline E1 E A R 0P A2 0P1 Q S D1 D 4 D2 1 2 3 L1 A3 D3 E2 2X E3 A1 4X L Note: 1. Pulse test, t 300s, duty cycle, d 2%. e b b1 c e1 3X 3X PINS: 1 - Gate 2 - Emitter 3, 4 - Collector ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537