X-On Electronics has gained recognition as a prominent supplier of RGPR30NS40HRTL IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGPR30NS40HRTL IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGPR30NS40HRTL ROHM

Name: RGPR30NS40HRTL
Brand: ROHM
SKU: RGPR30NS40HRTL_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RGPR30NS40HRTL electronic component of ROHM

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Part No.	RGPR30NS40HRTL
Manufacturer:	ROHM
Category:	IGBT Transistors
Description:	IGBT Transistors 400V 30A 1.6V Vce Ignition IGBT
Datasheet:	RGPR30NS40HRTL Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 3.1622 ea
Line Total: USD 3.16

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

RGPR30NS40HRTL More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 1 Multiples : 1	1 : USD 3.1622 10 : USD 2.0301 100 : USD 1.8873 500 : USD 1.6699 1000 : USD 1.525

0 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 1 Multiples : 1	1 : USD 2.1411 10 : USD 1.8065 25 : USD 1.701 100 : USD 1.4663 500 : USD 1.205 1000 : USD 1.0507

We are delighted to provide the RGPR30NS40HRTL from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGPR30NS40HRTL and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGPR30NS40HR 400V 30A Ignition IGBT Datasheet Outline LPDS (TO-263S) / TO-262 BV 40030V CES (2) I 30A C V 1.6V CE(sat) (Typ.) (1) E (3) 300mJ AS (1)(2)(3) Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Self-Clamped Inductive Switching Energy (2) Collector (1) 3) Built in Gate-Emitter Protection Diode (3) Emitter 4) Built in Gate-Emitter Resistance 5) Qualified to AEC-Q101 (3) 6) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Taping / Tube Reel Size (mm) 330 / - Applications Ignition Coil Driver Circuits Tape Width (mm) 24 / - Type Solenoid Driver Circuits Basic Ordering Unit (pcs) 1,000 / 1,000 Packing Code TL / C9 RGPR30NS40 Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 430 V CES Emitter-Collector Voltage (V = 0V) V 25 V GE EC V Gate - Emitter Voltage 10 V GES Collector Current I 30 A C T = 25C E 300 mJ j AS Avalanche Energy (Single Pulse) *2 T = 150C E 180 mJ j AS Power Dissipation P 125 W D T Operating Junction Temperature 40 to +175 C j T Storage Temperature 55 to +175 C stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.08 - Rev.B 1/9Datasheet RGPR30NS40HR Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal Resistance IGBT Junction - Case R - - 1.20 C/W (j-c) Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. I = 2mA, V = 0V C GE Collector - Emitter Breakdown BV T = 25C 370 400 430 V CES j Voltage *2 T = 40 to 175C 365 - 435 V j Emitter - Collector Breakdown BV I = 10mA, V = 0V 25 35 - V EC C GE Voltage Gate - Emitter Breakdown BV I = 5mA, V = 0V - V 12 17 GES G CE Voltage V = 250V, V = 0V CE GE I T = 25C Collector Cut - off Current -- 7 A CES j *2 - - 100 A T = 150C j Gate - Emitter Leakage Current I V = 10V, V = 0V mA 0.4 0.6 1.2 GES GE CE V = 5V, I = 12mA CE C Gate - Emitter Threshold V T = 25C 1.3 1.7 2.1 V GE(th) j Voltage *2 - 1.3 - V T = 150C j I = 12A, V = 5V C GE Collector - Emitter Saturation V T = 25C - 1.60 2.00 V CE(sat) j Voltage T = 150C - 1.80 - V j I = 5A, V = 4.5V C GE Collector - Emitter Saturation V T = 25C - 1.17 1.50 V CE(sat) j Voltage T = 150C - 1.19 - V j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.08 - Rev.B 2/9

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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ROHM Semicon
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