TM GenX3 600V IGBT IXGA48N60B3 V = 600V CES IXGP48N60B3 I = 48A C110 IXGH48N60B3 V 1.8V CE(sat) Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G E V T = 25C to 150C 600 V (TAB) CES C V T = 25C to 150C, R = 1M 600 V CGR J GE TO-220 (IXGP) V Continuous 20 V GES V Transient 30 V GEM I T = 110C 48 A C110 C (TAB) I T = 25C, 1ms 280 A G CM C C E SSOA V = 15V, T = 125C, R = 5 I = 120 A GE VJ G CM TO-247 (IXGH) (RBSOA) Clamped inductive load 600V P T = 25C 300 W C C T -55 ... +150 C J T 150 C JM G T -55 ... +150 C (TAB) stg C E T 1.6mm (0.062 in.) from case for 10s 300 C L T Plastic body for 10 seconds 260 C G = Gate C = Collector SOLD E = Emitter TAB = Collector M Mounting torque (TO-247)(TO-220) 1.13/10 Nm/lb.in. d Features Weight TO-263 2.5 g TO-220 3.0 g z TO-247 6.0 g Optimized for low conduction and switching losses z Square RBSOA z International standard packages Advantages Symbol Test Conditions Characteristic Values z High power density (T = 25C unless otherwise specified) Min. Typ. Max. z J Low gate drive requirement BV I = 250A, V = 0V 600 V CES C GE Applications V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE z Power Inverters I V = V 25 A CES CE CES z UPS V = 0V T = 125C 250 A GE J z Motor Drives z I V = 0V, V = 20V 100 nA SMPS GES CE GE z PFC Circuits V I = 32A, V = 15V, Note 1 1.8 V CE(sat) C GE z Battery Chargers z Welding Machines z Lamp Ballasts 2008 IXYS CORPORATION, All rights reserved DS99938A(05/08)IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 28 46 S fs C CE C 3980 pF ies P C V = 25V, V = 0V, f = 1MHz 170 pF oes CE GE C 45 pF res Q 115 nC g Q I = 40A, V = 15V, V = 0.5 V 21 nC ge C GE CE CES Q 40 nC gc e t 22 ns d(on) Dim. Millimeter Inches t 25 ns ri Min. Max. Min. Max. Inductive Load, T = 25C J E 0.84 mJ A 4.7 5.3 .185 .209 on I = 30A, V = 15V A 2.2 2.54 .087 .102 C GE 1 t 130 200 ns d(off) A 2.2 2.6 .059 .098 2 V = 480V, R = 5 CE G t 116 200 ns b 1.0 1.4 .040 .055 fi b 1.65 2.13 .065 .084 1 E 0.66 1.20 mJ off b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 t 19 ns d(on) D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 t 25 ns Inductive Load, T = 125C ri J e 5.20 5.72 0.205 0.225 E 1.71 mJ I = 30A, V = 15V on L 19.81 20.32 .780 .800 C GE L1 4.50 .177 t 190 ns V = 480V, R = 5 d(off) CE G P 3.55 3.65 .140 .144 t 157 ns Q 5.89 6.40 0.232 0.252 fi R 4.32 5.49 .170 .216 E 1.30 mJ off S 6.15 BSC 242 BSC R 0.42 C/W thJC R (TO-247) 0.25 C/W thCS TO-220 (IXGP) Outline (TO-220) 0.50 C/W Note 1: Pulse test, t 300s duty cycle, d 2%. TO-263 (IXGA) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537