X-On Electronics has gained recognition as a prominent supplier of IXGA48N60B3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXGA48N60B3 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXGA48N60B3 IXYS

IXGA48N60B3 electronic component of IXYS
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Part No.IXGA48N60B3
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors 48 Amps 600V
Datasheet: IXGA48N60B3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 7.3091
10 : USD 4.9478
25 : USD 4.5672
50 : USD 4.3515
100 : USD 4.3515
250 : USD 3.9836
500 : USD 3.4888
1000 : USD 3.3493
2500 : USD 3.2605
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.8005
2 : USD 3.0861
3 : USD 3.0758
9 : USD 2.9412
N/A

Obsolete
   
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We are delighted to provide the IXGA48N60B3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXGA48N60B3 and other electronic components in the IGBT Transistors category and beyond.

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TM GenX3 600V IGBT IXGA48N60B3 V = 600V CES IXGP48N60B3 I = 48A C110 IXGH48N60B3 V 1.8V CE(sat) Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G E V T = 25C to 150C 600 V (TAB) CES C V T = 25C to 150C, R = 1M 600 V CGR J GE TO-220 (IXGP) V Continuous 20 V GES V Transient 30 V GEM I T = 110C 48 A C110 C (TAB) I T = 25C, 1ms 280 A G CM C C E SSOA V = 15V, T = 125C, R = 5 I = 120 A GE VJ G CM TO-247 (IXGH) (RBSOA) Clamped inductive load 600V P T = 25C 300 W C C T -55 ... +150 C J T 150 C JM G T -55 ... +150 C (TAB) stg C E T 1.6mm (0.062 in.) from case for 10s 300 C L T Plastic body for 10 seconds 260 C G = Gate C = Collector SOLD E = Emitter TAB = Collector M Mounting torque (TO-247)(TO-220) 1.13/10 Nm/lb.in. d Features Weight TO-263 2.5 g TO-220 3.0 g z TO-247 6.0 g Optimized for low conduction and switching losses z Square RBSOA z International standard packages Advantages Symbol Test Conditions Characteristic Values z High power density (T = 25C unless otherwise specified) Min. Typ. Max. z J Low gate drive requirement BV I = 250A, V = 0V 600 V CES C GE Applications V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE z Power Inverters I V = V 25 A CES CE CES z UPS V = 0V T = 125C 250 A GE J z Motor Drives z I V = 0V, V = 20V 100 nA SMPS GES CE GE z PFC Circuits V I = 32A, V = 15V, Note 1 1.8 V CE(sat) C GE z Battery Chargers z Welding Machines z Lamp Ballasts 2008 IXYS CORPORATION, All rights reserved DS99938A(05/08)IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 28 46 S fs C CE C 3980 pF ies P C V = 25V, V = 0V, f = 1MHz 170 pF oes CE GE C 45 pF res Q 115 nC g Q I = 40A, V = 15V, V = 0.5 V 21 nC ge C GE CE CES Q 40 nC gc e t 22 ns d(on) Dim. Millimeter Inches t 25 ns ri Min. Max. Min. Max. Inductive Load, T = 25C J E 0.84 mJ A 4.7 5.3 .185 .209 on I = 30A, V = 15V A 2.2 2.54 .087 .102 C GE 1 t 130 200 ns d(off) A 2.2 2.6 .059 .098 2 V = 480V, R = 5 CE G t 116 200 ns b 1.0 1.4 .040 .055 fi b 1.65 2.13 .065 .084 1 E 0.66 1.20 mJ off b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 t 19 ns d(on) D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 t 25 ns Inductive Load, T = 125C ri J e 5.20 5.72 0.205 0.225 E 1.71 mJ I = 30A, V = 15V on L 19.81 20.32 .780 .800 C GE L1 4.50 .177 t 190 ns V = 480V, R = 5 d(off) CE G P 3.55 3.65 .140 .144 t 157 ns Q 5.89 6.40 0.232 0.252 fi R 4.32 5.49 .170 .216 E 1.30 mJ off S 6.15 BSC 242 BSC R 0.42 C/W thJC R (TO-247) 0.25 C/W thCS TO-220 (IXGP) Outline (TO-220) 0.50 C/W Note 1: Pulse test, t 300s duty cycle, d 2%. TO-263 (IXGA) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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