X-On Electronics has gained recognition as a prominent supplier of IXA40RG1200DHGLB IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXA40RG1200DHGLB IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXA40RG1200DHGLB IXYS

IXA40RG1200DHGLB electronic component of IXYS
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See Product Specifications
Part No.IXA40RG1200DHGLB
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors XPT IGBT Phaseleg
Datasheet: IXA40RG1200DHGLB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 16.772 ea
Line Total: USD 16.77 
Availability - 1
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 16.772
2 : USD 12.166
4 : USD 11.494

   
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We are delighted to provide the IXA40RG1200DHGLB from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXA40RG1200DHGLB and other electronic components in the IGBT Transistors category and beyond.

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The IXA40RG1200DHGLB is a MOSFET gate driver manufactured by IXYS. It is a high power gate driver, offering up to 15A of peak drive and 10A of continuous drive. It is designed to be used with IXYS' IGBT transistors, and is capable of providing high speed switching, with a rise time of 10ns and a fall time of 8ns. The device is rated for operation at temperatures up to 150°C. It features an adjustable under-voltage lockout level, as well as an internal charge pump for rapid rise time, and is housed in a 4-pin epoxy package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
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