Preliminary Technical Information V = 2500V High Voltage IXYX25N250CV1 CES TM I = 25A XPT IGBT IXYX25N250CV1HV C110 V 4.0V w/ Diode CE(sat) t = 246ns fi(typ) PLUS247 (IXYX) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 2500 V CES J G V T = 25C to 175C, R = 1M 2500 V CGR J GE C Tab E V Continuous 20 V GES V Transient 30 V GEM TO-247PLUS-HV I T = 25C 95 A C25 C (IXYX...HV) I T = 110C 25 A C110 C I T = 110C 30 A F110 C I T = 25C, 1ms 235 A CM C SSOA V = 15V, T = 150C, R = 5 I = 100 A GE VJ G CM G (RBSOA) Clamped Inductive Load 1500 V E Tab C P T = 25C 937 W C C G = Gate E = Emitter T -55 ... +175 C J C = Collector Tab = Collector T 175 C JM T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force 20..120 /4.5..27 N/lb C Features Weight 6 g High Voltage Packages High Blocking Voltage High Peak Current Capability Low Saturation Voltage Symbol Test Conditions Characteristic Values Advantages (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250A, V = 0V 2500 V Low Gate Drive Requirement CES C GE High Power Density V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE I V = V , V = 0V 25 A CES CE CES GE Applications T = 100C 100 A J I V = 0V, V = 20V 100 nA Switch-Mode and Resonant-Mode GES CE GE Power Supplies V I = 25A, V = 15V, Note 1 3.4 4.0 V CE(sat) C GE Uninterruptible Power Supplies (UPS) T = 150C 4.7 V J Laser Generators Capacitor Discharge Circuits AC Switches 2017 IXYS CORPORATION, All Rights Reserved DS100735B(4/17)IXYX25N250CV1 IXYX25N250CV1HV Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 25A, V = 10V, Note 1 16 27 S fs C CE R Gate Input Resistance 2.8 Gi C 3060 pF ies C V = 25V, V = 0V, f = 1MHz 166 pF oes CE GE C 43 pF res Q 147 nC g(on) Q I = 25A, V = 15V, V = 0.5 V 16 nC ge C GE CE CES Q 68 nC gc t 15 ns d(on) t Inductive load, T = 25C 34 ns ri J E I = 25A, V = 15V 8.3 mJ on C GE t V = 0.5 V , R = 5 230 ns d(off) CE CES G t 246 ns fi Note 2 E 7.3 mJ off t 18 ns d(on) Inductive load, T = 150C t 33 ns J ri I = 25A, V = 15V E 11.0 mJ C GE on t V = 0.5 V , R = 5 225 ns d(off) CE CES G t 350 ns fi Note 2 E 10.5 mJ off R 0.16 C/W thJC R 0.15 C/W thCS Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 25A, V = 0V, Note 1 3.5 V F F GE T = 150C 3.1 V J I I = 25A, V 38 = 0V, T = 150C A RM F GE J -di /dt = 500A/ sV = 1200V t 185 ns F R rr R 0.32 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537