X-On Electronics has gained recognition as a prominent supplier of RGTH40TK65DGC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGTH40TK65DGC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGTH40TK65DGC11 ROHM

Name: RGTH40TK65DGC11
Brand: ROHM
SKU: RGTH40TK65DGC11_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RGTH40TK65DGC11 electronic component of ROHM

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See Product Specifications

Part No.	RGTH40TK65DGC11
Manufacturer:	ROHM
Category:	IGBT Transistors
Description:	IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
Datasheet:	RGTH40TK65DGC11 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 12.6058 ea
Line Total: USD 12.61

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

RGTH40TK65DGC11 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 28 Nov to Wed. 04 Dec MOQ : 1 Multiples : 1	1 : USD 12.6058 10 : USD 10.9125 100 : USD 8.9411 500 : USD 7.6114 1000 : USD 6.4884

0 Ship by Tue. 26 Nov to Thu. 28 Nov MOQ : 450 Multiples : 450	450 : USD 4.4779

We are delighted to provide the RGTH40TK65DGC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGTH40TK65DGC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGTH40TK65D 650V 20A Field Stop Trench IGBT Data Sheet lOutline TO-3PFM V 650V CES I 14A C(100C) V 1.6V I =20A CE(sat) (Typ.) C P 56W (1)(2) (3) D lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) High Speed Switching (1) Gate (2) Collector *1 3) Low Switching Loss & Soft Switching (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant lPackaging Specifications Packaging Tube lApplications PFC Reel Size (mm) - UPS Tape Width (mm) - Type Power Conditioner Basic Ordering Unit (pcs) 450 IH Packing Code C11 Marking RGTH40TK65D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES Gate - Emitter Voltage V V 30 GES T = 25C I 23 A C C Collector Current T = 100C I 14 A C C *1 Pulsed Collector Current 80 A I CP T = 25C I 26 A C F Diode Forward Current T = 100C I 15 A C F *1 Diode Pulsed Forward Current 80 A I FP T = 25C P 56 W C D Power Dissipation T = 100C P 28 W C D Operating Junction Temperature T C -40 to +175 j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 1/11Data Sheet RGTH40TK65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 2.64 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 3.93 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current - - 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 13.3mA 4.5 5.5 6.5 V GE(th) CE C Voltage I = 20A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.6 2.1 V CE(sat) j Voltage T = 175C - 2.1 - j www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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