X-On Electronics has gained recognition as a prominent supplier of RGTH50TS65GC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGTH50TS65GC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGTH50TS65GC11 ROHM

RGTH50TS65GC11 electronic component of ROHM
RGTH50TS65GC11 ROHM
RGTH50TS65GC11 IGBT Transistors
RGTH50TS65GC11  Semiconductors

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See Product Specifications
Part No. RGTH50TS65GC11
Manufacturer: ROHM
Category: IGBT Transistors
Description: ROHM Semiconductor IGBT Transistors
Datasheet: RGTH50TS65GC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.125 ea
Line Total: USD 4.12 
Availability - 311
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
311
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 4.125
10 : USD 2.9095
100 : USD 2.31
250 : USD 2.288
450 : USD 1.859

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RGTH50TS65GC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGTH50TS65GC11 and other electronic components in the IGBT Transistors category and beyond.

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RGTH50TS65 650V 25A Field Stop Trench IGBT Datasheet Outline TO-247N V 650V CES I 25A C(100C) V 1.6V CE(sat) (Typ.) P 174W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector 3) Low Switching Loss & Soft Switching (1) (3) Emitter 4) Pb - free Lead Plating RoHS Compliant (3) Applications Packaging Specifications PFC Packaging Tube UPS Reel Size (mm) - Power Conditioner Tape Width (mm) - Type IH Basic Ordering Unit (pcs) 450 Packing code C11 RGTH50TS65 Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 50 A C C Collector Current T = 100C I 25 A C C *1 Pulsed Collector Current 100 A I CP T = 25C P 174 W C D Power Dissipation T = 100C P 87 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 1/9Data Sheet RGTH50TS65 Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.86 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 -- V CES C GE Voltage Collector Cut - off Current I V = 650V, V = 0V -- 10 A CES CE GE Gate - Emitter Leakage Current I V = 30V, V = 0V - - nA 200 GES GE CE Gate - Emitter Threshold V V = 5V, I = 17.5mA 4.5 5.5 6.5 V GE(th) CE C Voltage I = 25A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.6 2.1 V CE(sat) j Voltage T = 175C - 2.1 - j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 2/9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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