X-On Electronics has gained recognition as a prominent supplier of APT20GT60BRDQ1G IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. APT20GT60BRDQ1G IGBT Transistors are a product manufactured by Microchip. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

APT20GT60BRDQ1G Microchip

APT20GT60BRDQ1G electronic component of Microchip
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See Product Specifications
Part No.APT20GT60BRDQ1G
Manufacturer: Microchip
Category: IGBT Transistors
Description: IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
Datasheet: APT20GT60BRDQ1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.567 ea
Line Total: USD 6.57 
Availability - 1
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 6.567
10 : USD 6.028
25 : USD 5.753
100 : USD 4.906
250 : USD 4.807

   
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We are delighted to provide the APT20GT60BRDQ1G from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT20GT60BRDQ1G and other electronic components in the IGBT Transistors category and beyond.

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TO-247 TYPICAL PERFORMANCE CURVES APT20GT60BRDQ1(G) 600V APT20GT60BRDQ1 APT20GT60BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltag e Drop High Freq. Switching to 150KHz Low Tail Current Ultra Low Leakag e Current C RBSOA and SCSOA Rated G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter UNIT APT20GT60BRDQ1(G) V Collector-Emitter Voltage 600 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 43 C1 C I Continuous Collector Current T = 110C 20 Amps C2 C 1 I Pulsed Collector Current T = 150C 80 CM C Switching Safe Operating Area T = 150C SSOA 80A 600V J P Total Power Dissipation Watts 174 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 0.5mA) 600 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 500A, T = 25C) GE(TH) 3 4 5 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 20A, T = 25C) 1.6 2.0 2.5 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 20A, T = 125C) 2.8 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 50 CE GE j I A CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) 1000 CE GE j I Gate-Emitter Leakage Current (V = 20V) nA GES 100 GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT20GT60BRDQ1(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C 1100 Input Capacitance Capacitance ies C pF 107 Output Capacitance V = 0V, V = 25V oes GE CE C f = 1 MHz 63 Reverse Transfer Capacitance res V V Gate-to-Emitter Plateau Voltage Gate Charge 7.5 GEP 3 Q V = 15V Total Gate Charge 100 g GE V = 300V Q nC Gate-Emitter Charge 7 CE ge I = 20A Q C 43 Gate-Collector Mille) Charge gc T = 150C, R = 5, V = J G GE Switching Safe Operating Area SSOA A 80 15V, L = 100H,V = 600V CE t Inductive Switching (25C) Turn-on Delay Time d(on) 8 V = 400V t Current Rise Time 9 CC r ns t V = 15V Turn-off Delay Time d(off) GE 80 I = 20A t C Current Fall Time 39 f R = 5 4 G E Turn-on Switching Energy 215 on1 T = +25C 5 J E J Turn-on Switching Energy (Diode) 210 on2 6 E Turn-off Switching Energy 245 off t Inductive Switching (125C) Turn-on Delay Time d(on) 8 t V = 400V Current Rise Time 9 r CC ns V = 15V t Turn-off Delay Time GE d(off) 100 I = 20A t C Current Fall Time f 60 R = 5 4 4 G E Turn-on Switching Energy 215 on1 T = +125C 55 J E J Turn-on Switching Energy (Diode) 375 on2 6 E Turn-off Switching Energy 395 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .72 JC C/W R Junction to Case (DIODE) 1.35 JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure 24.) 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reser ves the right to chang e , without notice , the specifications and information contained herein. 052-6265 Rev C 6-2008

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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