TO-247 TYPICAL PERFORMANCE CURVES APT20GT60BRDQ1(G) 600V APT20GT60BRDQ1 APT20GT60BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltag e Drop High Freq. Switching to 150KHz Low Tail Current Ultra Low Leakag e Current C RBSOA and SCSOA Rated G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter UNIT APT20GT60BRDQ1(G) V Collector-Emitter Voltage 600 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 43 C1 C I Continuous Collector Current T = 110C 20 Amps C2 C 1 I Pulsed Collector Current T = 150C 80 CM C Switching Safe Operating Area T = 150C SSOA 80A 600V J P Total Power Dissipation Watts 174 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 0.5mA) 600 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 500A, T = 25C) GE(TH) 3 4 5 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 20A, T = 25C) 1.6 2.0 2.5 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 20A, T = 125C) 2.8 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 50 CE GE j I A CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) 1000 CE GE j I Gate-Emitter Leakage Current (V = 20V) nA GES 100 GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT20GT60BRDQ1(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C 1100 Input Capacitance Capacitance ies C pF 107 Output Capacitance V = 0V, V = 25V oes GE CE C f = 1 MHz 63 Reverse Transfer Capacitance res V V Gate-to-Emitter Plateau Voltage Gate Charge 7.5 GEP 3 Q V = 15V Total Gate Charge 100 g GE V = 300V Q nC Gate-Emitter Charge 7 CE ge I = 20A Q C 43 Gate-Collector Mille) Charge gc T = 150C, R = 5, V = J G GE Switching Safe Operating Area SSOA A 80 15V, L = 100H,V = 600V CE t Inductive Switching (25C) Turn-on Delay Time d(on) 8 V = 400V t Current Rise Time 9 CC r ns t V = 15V Turn-off Delay Time d(off) GE 80 I = 20A t C Current Fall Time 39 f R = 5 4 G E Turn-on Switching Energy 215 on1 T = +25C 5 J E J Turn-on Switching Energy (Diode) 210 on2 6 E Turn-off Switching Energy 245 off t Inductive Switching (125C) Turn-on Delay Time d(on) 8 t V = 400V Current Rise Time 9 r CC ns V = 15V t Turn-off Delay Time GE d(off) 100 I = 20A t C Current Fall Time f 60 R = 5 4 4 G E Turn-on Switching Energy 215 on1 T = +125C 55 J E J Turn-on Switching Energy (Diode) 375 on2 6 E Turn-off Switching Energy 395 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .72 JC C/W R Junction to Case (DIODE) 1.35 JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure 24.) 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reser ves the right to chang e , without notice , the specifications and information contained herein. 052-6265 Rev C 6-2008