X-On Electronics has gained recognition as a prominent supplier of APT20M11JVR Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. APT20M11JVR Discrete Semiconductor Modules are a product manufactured by Microchip. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

APT20M11JVR Microchip

APT20M11JVR electronic component of Microchip
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Part No.APT20M11JVR
Manufacturer: Microchip
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules FG, MOSFET, 200V, 0.011_OHM, SOT-227
Datasheet: APT20M11JVR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 93.548 ea
Line Total: USD 935.48 
Availability - 19
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
19
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 10
Multiples : 10
10 : USD 93.548
100 : USD 76.167

7
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 93.548
100 : USD 76.167

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Configuration
Height
Length
Width
Brand
Number Of Channels
Transistor Polarity
Cnhts
Fall Time
Hts Code
Id - Continuous Drain Current
Mxhts
Pd - Power Dissipation
Product Type
Rds On - Drain-Source Resistance
Rise Time
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Taric
Tradename
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Vds - Drain-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the APT20M11JVR from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT20M11JVR and other electronic components in the Discrete Semiconductor Modules category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

APT20M11JVR 200V 175A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.UL Recognize ISOTOP D Faster Switching 100% Avalanche Tested Lower Leakage Popular SOT-227 Package G S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT20M11JVR UNIT V Drain-Source Voltage 200 Volts DSS I Continuous Drain Current T = 25C 175 D C Amps 1 I Pulsed Drain Current 700 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 700 Watts C P D Linear Derating Factor 5.6 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 175 Amps AR 1 E 30 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 3600 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 200 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 175 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 0.5 I ) Ohms 0.011 DS(on) GS D Cont. Zero Gate Voltage Drain Current (V = V , V = 0V) 100 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C) 500 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 5.0mA) Volts 24 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT20M11JVR Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance V = 0V 18000 21600 iss GS C Output Capacitance V = 25V oss 4100 5740 pF DS C f = 1 MHz Reverse Transfer Capacitance rss 1350 2025 Q 3 Total Gate Charge V = 10V g 690 1035 GS Q V = 0.5 V Gate-Source Charge 95 140 nC gs DD DSS I = 0.5 I 25C Q D D Cont. Gate-Drain Mille) Charge gd 290 435 t Turn-on Delay Time V = 15V 20 40 d(on) GS t V = 0.5 V Rise Time 40 80 r DD DSS ns I = I 25C t Turn-off Delay Time D D Cont. 75 115 d(off) R = 0.6 t G Fall Time 10 20 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 175 S Amps 1 I Pulsed Source Current (Body Diode) 700 SM 2 V Diode Forward Voltage (V = 0V, I = -I ) 1.3 Volts SD GS S D Cont. t Reverse Recovery Time (I = -I , dl /dt = 100A/s) 460 ns rr S D Cont. S Q Reverse Recovery Charge (I = -I , dl /dt = 100A/s) 7 C rr S D Cont. S THERMAL/PACKAGE CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.18 JC C/W R Junction to Ambient 40 JA V RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) 2500 Volts Isolation Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 13 lbin 1 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting T = +25C, L = 235H, R = 25, Peak I = 175A j G L 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.2 D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 Note: 0.02 0.005 t 1 0.01 t SINGLE PULSE 2 t 1 Duty Factor D = / t 2 0.001 Peak T = P x Z + T J DM JC C 0.0005 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5551 Rev B Z , THERMAL IMPEDANCE (C/W) JC P DM

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