X-On Electronics has gained recognition as a prominent supplier of APT2X101DL40J Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. APT2X101DL40J Discrete Semiconductor Modules are a product manufactured by Microchip. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

APT2X101DL40J Microchip

APT2X101DL40J electronic component of Microchip
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See Product Specifications
Part No.APT2X101DL40J
Manufacturer: Microchip
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules Fast Recovery Epitaxial Diode - DL
Datasheet: APT2X101DL40J Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 23.5706
10 : USD 22.1104
25 : USD 21.1162
100 : USD 19.1485
250 : USD 17.8644
500 : USD 17.8333
N/A

Obsolete
   
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We are delighted to provide the APT2X101DL40J from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT2X101DL40J and other electronic components in the Discrete Semiconductor Modules category and beyond.

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APT2X101DL40J 400V 100A Ultrafast Soft Recovery Dual Recti er Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Ultrafast Recovery Times (t ) Low Losses Anti-Parallel Diode rr -Switchmode Power Supply -Inverters Soft Recoverery Characteristics Low Noise Switching UL Recongnize file 145592 ISOTOP Free Wheeling Diode Low Forward Voltage Cooler Operation - Motor Controllers Higher Reliability Systems - Converters Low Forward Voltage 2 3 Snubber Diode High Blocking Voltage Increased System Power Uninterruptible Power Supply Density Induction Heating Low Leakage Current High Speed Recti ers 1 4 APT2X101DL40J MAXIMUM RATINGS All Ratings per Diode: T = 25C unless otherwise speci ed. C Symbol Characteristic / Test Conditions Ratings Unit Maximum D.C. Reverse Voltage V R V Maximum Peak Repetitive Reverse Voltage 400 Volts RRM V Maximum Working Peak Reverse Voltage RWM I Maximum Average Forward current (T = 127C, Duty Cycle = 0.5) 100 F(AV) C I RMS Forward Currrent (Square wave, 50% duty) 204 Amps F(RMS) I Non-Repetitive Forward Surge Current (T = 45C, 8.3 ms) 1000 FSM J T , T Operating and Storage Junction Temperature Range -55 to 175 C J STG STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit I = 100A 1.0 1.125 F I = 150A 1.1 F V Forward Voltage Volts F I = 200A 1.2 F I = 100A, T = 150C .95 F J V = 400V 500 R I Maximum Reverse Leakage Current A RM V = 400V, T = 125C 1000 R J C Junction Capacitance, V = 200V 215 pF T R L Series Inductance Lead to Lead 5mm from Base) 10 nH S Microsemi Website - DYNAMIC CHARACTERISTICS APT2X101DL40J Symbol Characteristic / Test Conditions Min Typ Max Unit t Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C 40 rr F F R J ns t Reverse Recovery Time 120 rr I = 100A, di /dt = -200A/s F F Q Reverse Recovery Charge 830 nC rr V = 268V, T = 25C R C I Maximum Reverse Recovery Current 13 Amps RRM t Reverse Recovery Time 240 ns rr I = 100A, di /dt = -200A/s F F Q Reverse Recovery Charge 3500 nC rr V = 268V, T = 125C R C I Maximum Reverse Recovery Current 25 Amps RRM t Reverse Recovery Time 160 ns rr I = 100A, di /dt = -1000A/ F F Q Reverse Recovery Charge 6600 nC rr s V = 268V, T = 125C R C I Maximum Reverse Recovery Current 76 Amps RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit R Junction-to-Case Thermal Resistance 0.42 JC C/W R Junction-to-Ambient Thermal Resistance 20 JA 1.03 oz W Package Weight T 29.2 g 10lbin Torque Maximum Mounting Torque 1.1Nm Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 0.45 0.40 0.35 0.30 0.25 0.20 Note: t 0.15 1 t 2 0.1 t 1 t Duty Factor D = / 2 0.05 Peak T = P x Z + T J DM JC C 0 -5 -4 -3 -2 -1 10 10 10 10 10 1 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 052-6322 Rev E 9 - 2009 Z , THERMAL IMPEDANCE (C/W) JC P DM

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