2 3 2 3 1 4 1 4 Parallel APT2X101S20J 200V 120AUL Recognize APT2X101S20J file E145592 ISOTOP DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODE PRODUCT FEATURES PRODUCT APPLICATIONS PRODUCT BENEFITS Ultrafast Recovery Times Rectifiers in Switchmode Power Low Losses Supplies (SMPS) Soft Recovery Characteristics Low Noise Switching Popular SOT-227 Package Cooler Operation Free Wheeling Diode in Rugged - Low Voltage Converters Higher Reliability Systems Avalanche Energy Rated Increased System Power Low Forward Voltage Density High Blocking Voltage Low Leakage Current MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Characteristic / Test Conditions Symbol APT2X101S20J UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 200 Volts RRM V Maximum Working Peak Reverse Voltage RWM I 120 Maximum Average Forward Current (T = 105C, Duty Cycle = 0.5) F(AV) C I 213 RMS Forward Current (Square wave, 50% duty) Amps F(RMS) I Non-Repetitive Forward Surge Current (T = 45C, 8.3ms) 1000 FSM J T ,T Operating and StorageTemperature Range -55 to 150 C J STG E mJ Avalanche Energy (2A, 50mH) 100 AVL STATIC ELECTRICAL CHARACTERISTICS Symbol MIN TYP MAX UNIT I = 100A .89 .95 F V I = 200A Forward Voltage 1.06 Volts F F I = 100A, T = 125C .76 F J V = 200V 2 R I Maximum Reverse Leakage Current mA RM V = 200V, T = 125C 40 R J C 470 pF Junction Capacitance, V = 200V T R Microsemi Website - DYNAMIC CHARACTERISTICS APT2X101S20J Symbol Characteristic Test Conditions MIN TYP MAX UNIT t ns Reverse Recovery Time - 70 rr I = 100A, di /dt = -200A/s F F Q - 240 nC Reverse Recovery Charge rr V = 133V, T = 25C R C I -6- Amps Maximum Reverse Recovery Current RRM t ns - 110 Reverse Recovery Time rr I = 100A, di /dt = -200A/s F F Q - 690 nC Reverse Recovery Charge rr V = 133V, T = 125C R C I -11 - Amps Maximum Reverse Recovery Current RRM t -95 ns Reverse Recovery Time rr I = 100A, di /dt = -700A/s F F Q - 1750 nC Reverse Recovery Charge rr V = 133V, T = 125C R C I Maximum Reverse Recovery Current -32 Amps RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R C/W JC Junction-to-Case Thermal Resistance .33 V Volts Isolation 2500 RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) oz 1.03 W Package Weight T g 29.2 10 lbin Torque Maximum Terminal & Mounting Torque 1.1 Nm Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 D = 0.9 0.30 0.25 0.7 0.20 0.5 0.15 Note: t 1 0.3 0.10 t 2 t 0.05 1 Duty Factor D = / t 0.1 2 SINGLE PULSE Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION T ( C) T ( C) J C 0.0673 0.188 0.0743 Dissipated Power (Watts) 0.0182 0.361 5.17 Z are the external thermal EXT impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 053-6023 Rev C 7-2006 Z , THERMAL IMPEDANCE (C/W) JC Z EXT P DM