TM GB01SLT12-214 1200V 1A SiC Schottky MPS Diode Silicon Carbide Schottky Diode VRRM = 1200 V F (T 150C) I L = 1 A QC = 5 nC Features Package Low V for High Temperature Operaon ti F K Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F RoHS Low Thermal Resistance Low Reverse Leakage Current Temperature Independent Fast Switching Posivti e Temperature Coe cient of V F A DO-214 REACH High dV/dt Ruggedness Advantages Applications Improved System E ciency High Voltage Sensing High System Reliability Solar Inverters Opmal Pti rice Performance Electric Vehicles Reduced Cooling Requirements High Frequency Converters Increased System Power Density Baerytt Chargers Zero Reverse Recovery Current AC/DC Power Supplies Easy to Parallel without Thermal Runaway Anti-P arallel / Free-Wheeling Diode Enables Extremely Fast Switching LED and HID Lighng ti Absolute Maximum Ratings (At T = 25C Unless Otherwise Stated) L Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1200 V RRM Continuous Forward Current IF TL 150C 1 A T = 25C, t = 10 ms 10 Non-Repetitive Peak Forward Surge Current, Half Sine L P IF,SM A Wave T = 150C, t = 10 ms 8 L P TL = 25C, tP = 10 ms 6 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TL = 150C, tP = 10 ms 5 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 50 A F,MAX L P 2 2 2 i t Value i dt T = 25C, t = 10 ms 0.5 A s L P Non-Repetitive Avalanche Energy EAS L = 35.9 mH, IAS = 1 A 18 mJ Diode Ruggedness dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation P T = 25C 20 W Fig. 3 TOT L Operating and Storage Temperature Tj , Tstg -55 to 175 C Apr. 20 Rev 1.4 www.genesicsemi.com/sic-schottky-mps/GB01SLT12-214/GB01SLT12-214.pdf Page 1 of 6TM GB01SLT12-214 1200V 1A SiC Schottky MPS Diode Electrical Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 1 A, T = 25C 1.5 1.8 F j Diode Forward Voltage VF V Fig. 1 I = 1 A, T = 175C 1.9 F j V = 1200 V, T = 25C 1 5 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 2 R j VR = 400 V 4 Total Capacitive Charge Q nC Fig. 5 C V = 800 V 5 R IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 61 Total Capacitance C pF Fig. 4 VR = 800 V, f = 1MHz 4 Thermal/Package Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Lead R 7.72 C/W thJL Weight W 0.3 g T Apr. 20 Rev 1.4 www.genesicsemi.com/sic-schottky-mps/GB01SLT12-214/GB01SLT12-214.pdf Page 2 of 6