X-On Electronics has gained recognition as a prominent supplier of GB01SLT12-252 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. GB01SLT12-252 Schottky Diodes & Rectifiers are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

GB01SLT12-252 GeneSiC Semiconductor

GB01SLT12-252 electronic component of GeneSiC Semiconductor
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Part No.GB01SLT12-252
Manufacturer: GeneSiC Semiconductor
Category: Schottky Diodes & Rectifiers
Description: GeneSiC Semiconductor Schottky Diodes & Rectifiers 1200V 1A SiC Schottky Rectifier
Datasheet: GB01SLT12-252 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 50
Multiples : 2500
50 : USD 1.1411
2501 : USD 1.0773
5000 : USD 1.0139
10000 : USD 0.9491
20000 : USD 0.9234
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.0955
10 : USD 1.539
25 : USD 1.378
100 : USD 1.2844
250 : USD 1.235
500 : USD 1.125
1000 : USD 1.0875
2500 : USD 1.04
5000 : USD 1.0275
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GB01SLT12-252 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GB01SLT12-252 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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GB01SLT12-252 TM 1200V 1A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1200 V RRM IF (T = 168C) = 1 A C Q = 5 nC C Features Package Low V for High Temperature Operation F Case Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F Low Thermal Resistance RoHS Low Reverse Leakage Current Temperature Independent Fast Switching Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness TO-252-2 REACH K A Advantages Applicaoti ns Improved System E c iency High Voltage Sensing High System Reliability Solar Inverters Op timal Price Performance Electric Vehicles Reduced Cooling Requirements High Frequency Converters Increased System Power Density Ba ttery Chargers Zero Reverse Recovery Current AC/DC Power Supplies Easy to Parallel without Thermal Runaway An ti-Parallel / Free-Wheeling Diode Enables Extremely Fast Switching LED and HID Ligh ting Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1200 V RRM TC = 100C, D = 1 4 Continuous Forward Current IF TC = 135C, D = 1 3 A Fig. 4 T = 168C, D = 1 1 C T = 25C, t = 10 ms 10 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 8 C P TC = 25C, tP = 10 ms 6 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 4 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 50 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 0.5 A s C P Non-Repetitive Avalanche Energy EAS L = 35.9 mH, IAS = 1 A 18 mJ Diode Ruggedness dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation P T = 25C 40 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GB01SLT12-252/GB01SLT12-252.pdf Page 1 of 7GB01SLT12-252 TM 1200V 1A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 1 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 1 A, T = 175C 1.9 F j V = 1200 V, T = 25C 1 5 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 2 R j VR = 400 V 4 Total Capacitive Charge Q nC Fig. 7 C VR = 800 V 5 IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 61 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 4 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 3.71 C/W Fig. 9 Weight W 0.3 g T Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GB01SLT12-252/GB01SLT12-252.pdf Page 2 of 7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMICONDUCTOR INC.
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