GB01SLT12-252 TM 1200V 1A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1200 V RRM IF (T = 168C) = 1 A C Q = 5 nC C Features Package Low V for High Temperature Operation F Case Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F Low Thermal Resistance RoHS Low Reverse Leakage Current Temperature Independent Fast Switching Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness TO-252-2 REACH K A Advantages Applicaoti ns Improved System E c iency High Voltage Sensing High System Reliability Solar Inverters Op timal Price Performance Electric Vehicles Reduced Cooling Requirements High Frequency Converters Increased System Power Density Ba ttery Chargers Zero Reverse Recovery Current AC/DC Power Supplies Easy to Parallel without Thermal Runaway An ti-Parallel / Free-Wheeling Diode Enables Extremely Fast Switching LED and HID Ligh ting Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1200 V RRM TC = 100C, D = 1 4 Continuous Forward Current IF TC = 135C, D = 1 3 A Fig. 4 T = 168C, D = 1 1 C T = 25C, t = 10 ms 10 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 8 C P TC = 25C, tP = 10 ms 6 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 4 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 50 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 0.5 A s C P Non-Repetitive Avalanche Energy EAS L = 35.9 mH, IAS = 1 A 18 mJ Diode Ruggedness dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation P T = 25C 40 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GB01SLT12-252/GB01SLT12-252.pdf Page 1 of 7GB01SLT12-252 TM 1200V 1A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 1 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 1 A, T = 175C 1.9 F j V = 1200 V, T = 25C 1 5 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 2 R j VR = 400 V 4 Total Capacitive Charge Q nC Fig. 7 C VR = 800 V 5 IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 61 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 4 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 3.71 C/W Fig. 9 Weight W 0.3 g T Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GB01SLT12-252/GB01SLT12-252.pdf Page 2 of 7