X-On Electronics has gained recognition as a prominent supplier of APT2X151DL60J Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. APT2X151DL60J Discrete Semiconductor Modules are a product manufactured by Microchip. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

APT2X151DL60J Microchip

APT2X151DL60J electronic component of Microchip
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Part No.APT2X151DL60J
Manufacturer: Microchip
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules Fast Recovery Epitaxial Diode - DL
Datasheet: APT2X151DL60J Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 32.6268
5 : USD 31.6454
10 : USD 30.6034
25 : USD 28.2976
50 : USD 27.7394
100 : USD 25.4365
250 : USD 24.4827
500 : USD 23.7152
1000 : USD 23.7152
N/A

Obsolete
   
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We are delighted to provide the APT2X151DL60J from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT2X151DL60J and other electronic components in the Discrete Semiconductor Modules category and beyond.

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23 2 3 APT2X151DL60J APT2X150DL60J 14 1 4 600V 150A Anti-Parallel Parallel APT2X150DL60J APT2X151DL60J Ultrafast Soft Recovery Dual Recti er Diode PRODUCT FEATURES PRODUCT BENEFITS PRODUCT APPLICATIONS Ultrafast Recovery Times (t ) Low Losses Anti-Parallel Diode rr -Switchmode Power Supply Soft Recoverery Characteristics Low Noise Switching -Inverters Low Forward Voltage Cooler Operation Free Wheeling Diode UL Recongnize file 145592 - Motor Controllers ISOTOP Low Forward Voltage Higher Reliability Systems - Converters High Blocking Voltage Increased System Power Snubber Diode Density Uninterruptible Power Supply Low Leakage Current Induction Heating High Speed Recti ers MAXIMUM RATINGS All Ratings per Diode: T = 25C unless otherwise speci ed. C Symbol Characteristic / Test Conditions Ratings Unit Maximum D.C. Reverse Voltage V R V Maximum Peak Repetitive Reverse Voltage 600 Volts RRM V Maximum Working Peak Reverse Voltage RWM I Maximum Average Forward current (T = 40C, Duty Cycle = 0.5) 150 F(AV) C I RMS Forward Currrent (Square wave, 50% duty) 165 Amps F(RMS) I Non-Repetitive Forward Surge Current (T = 45C, 8.3 ms) 1000 FSM J T , T Operating and Storage Junction Temperature Range -55 to 175 C J STG STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit I = 150A 1.25 1.6 F V Forward Voltage I = 300A 2.0 Volts F F I = 150A, T = 125C 1.25 F J V = 600V 25 R I Maximum Reverse Leakage Current A RM V = 600V, T = 125C 250 R J C Junction Capacitance, V = 200V 139 pF T R 1 Continuous current limited by package lead temperature. Microsemi Website - DYNAMIC CHARACTERISTICS APT2X151 150DL60J Symbol Characteristic / Test Conditions Min Typ Max Unit t Reverse Recovery Time I = 1A, di /dt = -15A/s, V = 30V, T = 25C 51 rr F F R J ns t Reverse Recovery Time 408 rr I = 150A, di /dt = -200A/s F F Q Reverse Recovery Charge 2387 nC rr V = 400V, T = 25C R C I Maximum Reverse Recovery Current 13 Amps RRM t Reverse Recovery Time 639 ns rr I = 150A, di /dt = -200A/s F F Q Reverse Recovery Charge 7253 nC rr V = 400V, T = 125C R C I Maximum Reverse Recovery Current 21 Amps RRM t Reverse Recovery Time 299 ns rr I = 150A, di /dt = -1000A/ F F Q Reverse Recovery Charge 12075 nC rr s V = 400V, T = 125C R C I Maximum Reverse Recovery Current 68 Amps RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit R Junction-to-Case Thermal Resistance 0.56 C/W JC V RMS Voltage (50-60mHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 2500 Isolation 1.03 oz W Package Weight T 29.2 g 10lbin Torque Maximum Mounting Torque 1.1Nm Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 0.6 0.5 0.4 0.3 Note: 0.2 t 1 t 2 0.1 t 1 Duty Factor D = /t 2 Peak T = P x Z + T J DM JC C 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 052-6320 Rev B 6 - 2009 Z , THERMAL IMPEDANCE (C/W) JC P DM

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