APT40M35JVFR 400V 93A 0.035 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS VUL Recognize also achieves faster switching speeds through optimized gate layout. ISOTOP Faster Switching Avalanche Energy Rated D Lower Leakage FAST RECOVERY BODY DIODE G Popular SOT-227 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT40M35JVFR UNIT V Drain-Source Voltage 400 Volts DSS I Continuous Drain Current T = 25C 93 D C Amps 1 I Pulsed Drain Current 372 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 700 Watts C P D Linear Derating Factor 5.6 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 93 Amps AR 1 E 50 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 3600 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 400 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 93 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, I = 46.5A) Ohms 0.035 DS(on) GS D Zero Gate Voltage Drain Current (V = 400V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 320V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 5mA) Volts 24 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT40M35JVFR Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 16800 20160 iss V = 0V GS C Output Capacitance 2400 3360 pF V = 25V oss DS C f = 1 MHz Reverse Transfer Capacitance 1070 1605 rss 3 Q Total Gate Charge V = 10V 710 1065 g GS V = 200V Q nC Gate-Source Charge 80 120 gs DD I = 93A 25C Q Gate-Drain Mille) Charge D 340 510 gd t (on) Turn-on Delay Time 20 40 d V = 15V GS t V = 200V Rise Time 30 60 r DD ns I = 93A 25C t (off) Turn-off Delay Time 75 115 d D R = 0.6 t G Fall Time 14 28 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 93 S Amps 1 I (Body Diode) Pulsed Source Current 372 SM 2 V Diode Forward Voltage (V = 0V, I = - 93A) 1.3 Volts SD GS S dv dv 5 Peak Diode Recovery / V/ns / 15 dt dt Reverse Recovery Time T = 25C 300 j ns t rr di (I = -93A, / = 100A/s) S dt T = 125C 600 j Reverse Recovery Charge T = 25C 2.2 j C Q rr di (I = -93A, / = 100A/s) S dt T = 125C 9 j Peak Recovery Current T = 25C 16 j I Amps RRM di (I = -93A, / = 100A/s) S dt T = 125C 33 j THERMAL / PACKAGE CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT Junction to Case 0.18 R JC C/W 40 R Junction to Ambient JA V RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) 2500 Volts Isolation Maximum Torque for Device Mounting Screws and Electrical Terminations. 10 Torque lbin 1 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting T = +25C, L = 0.83mH, R = 25, Peak I = 93A j G L 2 5 di Pulse Test: Pulse width < 380 S, Duty Cycle < 2% I I = 93A, / = 100A/s, T 150C, R = 2.0 V = 400V. S D dt j G R APT Reserves the right to change, without notice, the specifications and information contained herein. 0.2 D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 Note: 0.02 0.005 t 1 0.01 t SINGLE PULSE 2 t 1 Duty Factor D = / t 2 0.001 Peak T = P x Z + T J DM JC C 0.0005 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5892 Rev A 7-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM