X-On Electronics has gained recognition as a prominent supplier of APT40M35JVFR MOSFETs across the USA, India, Europe, Australia, and various other global locations. APT40M35JVFR MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

APT40M35JVFR Microchip

APT40M35JVFR electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.APT40M35JVFR
Manufacturer: Microchip
Category: MOSFETs
Description: MOSFET Power FREDFET - MOS5
Datasheet: APT40M35JVFR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 69.0764
2 : USD 67.7954
5 : USD 67.7954
10 : USD 67.6734
25 : USD 65.209
50 : USD 64.9162
100 : USD 62.1346
250 : USD 62.1346
500 : USD 57.3644
N/A

Obsolete
   
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We are delighted to provide the APT40M35JVFR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT40M35JVFR and other electronic components in the MOSFETs category and beyond.

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APT40M35JVFR 400V 93A 0.035 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS VUL Recognize also achieves faster switching speeds through optimized gate layout. ISOTOP Faster Switching Avalanche Energy Rated D Lower Leakage FAST RECOVERY BODY DIODE G Popular SOT-227 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT40M35JVFR UNIT V Drain-Source Voltage 400 Volts DSS I Continuous Drain Current T = 25C 93 D C Amps 1 I Pulsed Drain Current 372 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 700 Watts C P D Linear Derating Factor 5.6 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 93 Amps AR 1 E 50 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 3600 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 400 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 93 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, I = 46.5A) Ohms 0.035 DS(on) GS D Zero Gate Voltage Drain Current (V = 400V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 320V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 5mA) Volts 24 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT40M35JVFR Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 16800 20160 iss V = 0V GS C Output Capacitance 2400 3360 pF V = 25V oss DS C f = 1 MHz Reverse Transfer Capacitance 1070 1605 rss 3 Q Total Gate Charge V = 10V 710 1065 g GS V = 200V Q nC Gate-Source Charge 80 120 gs DD I = 93A 25C Q Gate-Drain Mille) Charge D 340 510 gd t (on) Turn-on Delay Time 20 40 d V = 15V GS t V = 200V Rise Time 30 60 r DD ns I = 93A 25C t (off) Turn-off Delay Time 75 115 d D R = 0.6 t G Fall Time 14 28 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 93 S Amps 1 I (Body Diode) Pulsed Source Current 372 SM 2 V Diode Forward Voltage (V = 0V, I = - 93A) 1.3 Volts SD GS S dv dv 5 Peak Diode Recovery / V/ns / 15 dt dt Reverse Recovery Time T = 25C 300 j ns t rr di (I = -93A, / = 100A/s) S dt T = 125C 600 j Reverse Recovery Charge T = 25C 2.2 j C Q rr di (I = -93A, / = 100A/s) S dt T = 125C 9 j Peak Recovery Current T = 25C 16 j I Amps RRM di (I = -93A, / = 100A/s) S dt T = 125C 33 j THERMAL / PACKAGE CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT Junction to Case 0.18 R JC C/W 40 R Junction to Ambient JA V RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) 2500 Volts Isolation Maximum Torque for Device Mounting Screws and Electrical Terminations. 10 Torque lbin 1 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting T = +25C, L = 0.83mH, R = 25, Peak I = 93A j G L 2 5 di Pulse Test: Pulse width < 380 S, Duty Cycle < 2% I I = 93A, / = 100A/s, T 150C, R = 2.0 V = 400V. S D dt j G R APT Reserves the right to change, without notice, the specifications and information contained herein. 0.2 D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 Note: 0.02 0.005 t 1 0.01 t SINGLE PULSE 2 t 1 Duty Factor D = / t 2 0.001 Peak T = P x Z + T J DM JC C 0.0005 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5892 Rev A 7-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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