X-On Electronics has gained recognition as a prominent supplier of GB02SHT01-46 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. GB02SHT01-46 Schottky Diodes & Rectifiers are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

GB02SHT01-46 GeneSiC Semiconductor

GB02SHT01-46 electronic component of GeneSiC Semiconductor
GB02SHT01-46 GeneSiC Semiconductor
GB02SHT01-46 Schottky Diodes & Rectifiers
GB02SHT01-46  Semiconductors

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See Product Specifications
Part No. GB02SHT01-46
Manufacturer: GeneSiC Semiconductor
Category: Schottky Diodes & Rectifiers
Description: GeneSiC Semiconductor Schottky Diodes & Rectifiers SiC Schottky Diode
Datasheet: GB02SHT01-46 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 48.2917
5 : USD 47.7349
10 : USD 43.9316
25 : USD 41.2128
50 : USD 40.7015
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GB02SHT01-46 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GB02SHT01-46 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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GB02SHT01-46 High Temperature Silicon Carbide V = 100 V RRM Power Schottky Diode I = 4 A F (Tc=25C) Q = 9 nC C Features Package 100 V Schottky rectifier RoHS Compliant 210 C maximum operating temperature Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of V F Temperature independent switching behavior 2 Lowest figure of merit Q /I C F 1 Available screened to Mil-PRF-19500 TO 46 Advantages Applications High temperature operation Down Hole Oil Drilling Improved circuit efficiency (Lower overall cost) Geothermal Instrumentation Low switching losses Solenoid Actuators Ease of paralleling devices without thermal runaway General Purpose High-Temperature Switching Smaller heat sink requirements Amplifiers Industrys lowest reverse recovery charge Solar Inverters Industrys lowest device capacitance Switched-Mode Power Supply (SMPS) Ideal for output switching of power supplies Power Factor Correction (PFC) Best in class reverse leakage current at operating temperature Maximum Ratings at T = 210 C, unless otherwise specified j Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V 100 V RRM T = 25 C Continuous forward current I C 4 A F Continuous forward current I T 180 C 2 A F C RMS forward current I T 180 C 4 A F(RMS) C Surge non-repetitive forward current, Half Sine I T = 25 C, t = 10 ms 10 A F,SM C P Wave T = 25 C, t = 10 s Non-repetitive peak forward current I C P 65 A F,max 2 2 2 I t value i dt T = 25 C, t = 10 ms 0.5 A S C P Power dissipation P T = 25 C 64 W tot C Operating and storage temperature T , T -55 to 210 C j stg Electrical Characteristics at T = 210 C, unless otherwise specified j Values Parameter Symbol Conditions Unit min. typ. max. I = 1 A, T = 25 C 1.6 F j Diode forward voltage V V F I = 1 A, T = 210 C 2.6 F j V = 100 V, T = 25 C 1 5 R j Reverse current I A R V = 100 V, T = 210 C R j 5 50 I I F F,MAX Total capacitive charge Q V = 100 V 9 nC C R dI /dt = 200 A/s F Switching time t V = 100 V < 17 ns s R T = 210 C j V = 1 V, f = 1 MHz, T = 25 C 76 R j Total capacitance C pF V = 100 V, f = 1 MHz, T = 25 C 20 R j Thermal Characteristics Thermal resistance, junction - case R 5.55 C/W thJC Mechanical Properties Mounting torque M 0.6 Nm Dec 2014 GB02SHT01-46 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 4: Current Derating Curves (D = t /T, t = 400 s) P P Figure 3: Power Derating Curve (Considering worst case Z conditions ) th Figure 5: Current vs Pulse Duration Curves at T = 190 C Figure 6: Transient Thermal Impedance C Dec 2014

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMICONDUCTOR INC.
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