T O-247 APT30SCD120B APT30SCD120S 1200V 30A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Higher Reliability Systems Anti-Parallel Diode Zero Recovery Times (t ) rr -Switchmode Power Supply -Inverters Popular TO-247 Package or Minimizes or eliminates 3 3 D PAK snubber surface mount D PAK package Power Factor Correction (PFC) Low Forward Voltage 1 2 1 2 Low Leakage Current 1 - Cathode 2 - Anode Back of Case -Cathode MAXIMUM RATINGS T = 25C unless otherwise speci ed. C Symbol Characteristic / Test Conditions Ratings Unit Maximum D.C. Reverse Voltage V R V Maximum Peak Repetitive Reverse Voltage 1200 Volts RRM V Maximum Working Peak Reverse Voltage RWM T = 25C 99 C I Maximum D.C. Forward current F T = 135C 29 C Amps I 150 Repetitive Peak Forward Suge Current (T = 45C, t = 10ms, Half Sine Wave) FRM J p I 330 Non-Repetitive Forward Surge Current (T = 25C, t = 10ms, Half Sine) FSM J p T = 25C 291 C P Power Dissipation W tot T = 125C 93 C T , T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature for 10 Seconds 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit I = 30A T = 25C 1.5 1.8 F J V Forward Voltage Volts F I = 30A, T = 150C 2.1 F J V = 1200V T = 25C 600 R J I Maximum Reverse Leakage Current A RM V = 1200V, T = 150C 3000 R J Q Total Capactive Charge V = 800V, I = 30A, di/dt = -100A/s, T = 25C 200 nC c R F J Junction Capacitance V = 0V, T = 25C, f = 1MHz 2100 R J C Junction Capacitance V = 200V, T = 25C, f = 1MHz 228 pF T R J Junction Capacitance V = 400V, T = 25C, f = 1MHz 167 R J Microsemi Website - APT30SCD120B S THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit Junction-to-Case Thermal Resistance 0.43 C/W R JC 0.22 oz W Package Weight T 5.9 g 10lbin Torque Maximum Mounting Torque 1.1Nm Microsemi reserves the right to change, without notice, the speci cations and information contained herein. TYPICAL PERFORMANCE CURVES 0.60 0.45 0.40 0.35 0.30 0.25 Note: 0.20 t 1 0.15 t 2 0.10 t 1 t Duty Factor D = / 2 0.05 Peak T = P x Z + T J DM JC C 0 -5 -4 -3 -2 10 10 10 10 0.1 1 10 100 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 100 140 T = -55C J T = 25C 120 J 100 80 100 T = 150C J 60 80 T = 125C 60 J 40 40 20 20 0 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 Case Temperature (C) V , ANODE-TO-CATHODE VOLTAGE (V) F FIGURE 3, Maximum Forward Current vs. Case Temperature FIGURE 2, Forward Current vs. Forward Voltage 050-7703 Rev A 10 - 2012 I , FORWARD CURRENT (A) F Z , THERMAL IMPEDANCE (C/W) JC I (peak) (A) F P DM