APT33GF120BR APT33GF120BR(G) 1200V 52A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using TO-247 Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage Current C Low Tail Current G C RBSOA and SCSOA Rated E G High Freq. Switching to 20KHz E MAXIMUM RATINGS (IGBT) All Ratings: T = 25C unless otherwise specified. C APT33GF120BR(G) Symbol Parameter UNIT V 1200 Collector-Emitter Voltage CES 1200 Collector-Gate Voltage (R = 20K ) Volts V CGR GE 20 V Gate Emitter Voltage GE 52 I Continuous Collector Current T = 25C C1 C I Continuous Collector Current T = 105C 33 C2 C Amps 1 I Pulsed Collector Current T = 25C 104 CM C I RBSOA Clamped Inductive Load Current R = 11 T = 125 C 66 LM G C 2 65 E Single Pule Avalanche Energy mJ AS P 297 Total Power Dissipation Watts D -55 to 150 T ,T Operating and Storage Junction Temperature Range J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol Characteristic / Test Conditions MIN TYP MAX UNIT 1200 BV Collector-Emitter Breakdown Voltage (V = 0V, I = 0.5mA) CES GE C 4.5 5.5 6.5 V (TH) Gate Threshold Voltage (V = V , I = 700A, T = 25C) GE CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 25A, T = 25C) 2.7 3.2 GE C j V (ON) CE 3.3 3.9 Collector-Emitter On Voltage (V = 15V, I = 25A, T = 125C) GE C j Collector Cut-off Current (V = V , V = 0V, T = 25C) 0.5 CE CES GE j I mA CES 5.0 Collector Cut-off Current (V = V , V = 0V, T = 125C) CE CES GE j I Gate-Emitter Leakage Current (V = 20V, V = 0V) 100 nA GES GE CE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS (IGBT) Symbol Characteristic Test Conditions MIN TYP MAX UNIT Capacitance C Input Capacitance 1855 ies V = 0V GE C Output Capacitance 230 pF oes V = 25V CE C Reverse Transfer Capacitance 110 f = 1 MHz res 3 Gate Charge Q Total Gate Charge 170 g V = 15V GE Q Gate-Emitter Charge 19 nC ge V = 0.5V CC CES Gate-Collector Mille) Charge Q 100 I = I gc C C2 Resistive Switching (25C) 24 t (on) Turn-on Delay Time d V = 15V GE t Rise Time 85 r V = 0.8V ns CC CES t (off) Turn-off Delay Time 170 d I = I C C2 t Fall Time R =10 125 G f t (on) Turn-on Delay Time 25 d t Rise Time 60 Inductive Switching (150C) r ns V (Peak) = 0.66V CLAMP CES t (off) Turn-off Delay Time 210 d V = 15V GE t Fall Time 74 f I = I C C2 R = 10 E Turn-on Switching Energy 2.8 on G T = +150C J Turn-off Switching Energy E 2.8 mJ off Total Switching Losses E 5.6 ts Turn-on Delay Time t (on) 27 Inductive Switching (25C) d V (Peak) = 0.66V CLAMP CES Rise Time t 65 r ns V = 15V GE Turn-off Delay Time t (off) 190 d I = I C C2 Fall Time R = 10 t 70 f G T = +25C J Total Switching Losses mJ E 5.2 ts Forward Transconductance 8.5 20 S gfe V = 20V, I = 25A CE C THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol Characteristic UNIT MIN TYP MAX Junction to Case 0.42 R JC C/W R Junction to Ambient 40 JA 0.22 oz W Package Weight T 5.90 gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 I = I , V = 50V, R = 25 , L = 120H, T = 25C C C2 CC GE j 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6206 Rev D 3-2003