APT33N90JCU2 Microchip

APT33N90JCU2 ISOTOP Boost chopper V = 900V DSS R = 120m max Tj = 25C Super Junction MOSFET DSon I = 33A Tc = 25C D Power Module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction Brake switch D Features - Ultra low R DSon G - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated ISOTOP Package (SOT-227) S Very low stray inductance High level of integration K S Benefits Outstanding performance at high frequency operation Stable temperature behavior D G Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive T of V C CEsat RoHS Compliant ISOTOP Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 900 V DSS T = 25C 33 c I Continuous Drain Current D T = 80C 25 A c I Pulsed Drain current 75 DM V Gate - Source Voltage 20 V GS R Drain - Source ON Resistance 120 DSon m P Maximum Power Dissipation T = 25C 290 W D c I Avalanche current (repetitive and non repetitive) 8.8 A AR E Repetitive Avalanche Energy 2.9 AR mJ E Single Pulse Avalanche Energy 1940 AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 6 www.microsemi.com APT33N90JCU2 Rev 1 October, 2012 APT33N90JCU2 All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V,V = 900V T = 25C 100 GS DS j I Zero Gate Voltage Drain Current A DSS V = 0V,V = 900V T = 125C 500 GS DS j R Drain Source on Resistance V = 10V, I = 26A 100 120 m DS(on) GS D V Gate Threshold Voltage V = V , I = 3mA 2.5 3 3.5 V GS(th) GS DS D I Gate Source Leakage Current V = 20 V, V = 0V 100 nA GSS GS DS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V V = 100V 6.8 iss GS DS nF f = 1MHz C Output Capacitance 0.33 oss Q Total gate Charge 270 g V = 10V GS Q Gate Source Charge V = 400V 32 nC gs Bus I = 26A D Q Gate Drain Charge 115 gd T Turn-on Delay Time 70 d(on) Inductive Switching (125C) V = 10V GS T Rise Time 20 r V = 600V ns Bus T Turn-off Delay Time 400 d(off) I = 26A D R = 7.5 T Fall Time G 25 f Inductive switching 25C E Turn-on Switching Energy 1.5 on V = 10V V = 600V mJ GS Bus E Turn-off Switching Energy 0.75 off I = 26A R = 7.5 D G Inductive switching 125C E Turn-on Switching Energy 2.1 on V = 10V V = 600V mJ GS Bus E Turn-off Switching Energy 0.85 off I = 26A R = 7.5 D G Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 1200 V RRM T = 25C 100 j I Maximum Reverse Leakage Current V =1200V A RM R T = 125C 500 j I DC Forward Current T = 80C 30 A F c I = 30A 2.6 3.1 F V Diode Forward Voltage I = 60A 3.2 V F F I = 30A T = 125C F j 1.8 T = 25C 300 j t Reverse Recovery Time ns rr I = 30A F T = 125C 380 j V = 800V R T = 25C 360 di/dt=200A/s j Q Reverse Recovery Charge nC rr T = 125C 1700 j 2 6 www.microsemi.com APT33N90JCU2 Rev 1 October, 2012