TYPICAL PERFORMANCE CURVES APT20GT60KR(G)
600V
APT20GT60KR
APT20GT60KRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Thunderbolt IGBT
TO-220
The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast
switching speed.
Low Forward Voltag e Drop High Freq. Switching to 150KHz
Low Tail Current Ultra Low Leakag e Current
C
RBSOA and SCSOA Rated
G
E
MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified.
C
Symbol Parameter UNIT
APT20GT60KR(G)
V
Collector-Emitter Voltage 600
CES
Volts
V
Gate-Emitter Voltage
30
GE
I Continuous Collector Current @ T = 25C
43
C1
C
I Continuous Collector Current @ T = 110C
20 Amps
C2 C
1
I Pulsed Collector Current @ T = 150C
80
CM C
Switching Safe Operating Area @ T = 150C
SSOA 80A @ 600V
J
P
Total Power Dissipation Watts
174
D
T ,T Operating and Storage Junction Temperature Range
-55 to 150
J STG
C
T
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX Units
V
Collector-Emitter Breakdown Voltage (V = 0V, I = 0.5mA)
600
(BR)CES
GE C
V
Gate Threshold Voltage (V = V , I = 500A, T = 25C)
GE(TH) 3 4 5
CE GE C j
Volts
Collector-Emitter On Voltage (V = 15V, I = 20A, T = 25C)
1.6 2.0 2.5
GE C j
V
CE(ON)
Collector-Emitter On Voltage (V = 15V, I = 20A, T = 125C)
2.8
GE C j
2
Collector Cut-off Current (V = 600V, V = 0V, T = 25C)
25
CE GE j
I
A
CES
2
Collector Cut-off Current (V = 600V, V = 0V, T = 125C)
1000
CE GE j
I
Gate-Emitter Leakage Current (V = 20V) nA
GES 100
GE
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - DYNAMIC CHARACTERISTICS APT20GT60KR(G)
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
C
1100
Input Capacitance Capacitance
ies
C pF
107
Output Capacitance V = 0V, V = 25V
oes
GE CE
C
f = 1 MHz
63
Reverse Transfer Capacitance
res
V V
Gate-to-Emitter Plateau Voltage Gate Charge 7.5
GEP
3
Q V = 15V
Total Gate Charge 100
g GE
V = 300V
Q
nC
Gate-Emitter Charge 7
CE
ge
I = 20A
Q C 43
Gate-Collector Mille) Charge
gc
T = 150C, R = 5, V =
J G GE
Switching Safe Operating Area
SSOA
A
80
15V, L = 100H,V = 600V
CE
t
Inductive Switching (25C)
Turn-on Delay Time
d(on) 8
V = 400V
t
Current Rise Time
9
CC
r
ns
t V = 15V
Turn-off Delay Time
d(off) GE 80
I = 20A
t C
Current Fall Time
39
f
R = 5
4
G
E
Turn-on Switching Energy
215
on1
T = +25C
5 J
E J
Turn-on Switching Energy (Diode)
210
on2
6
E
Turn-off Switching Energy
245
off
t Inductive Switching (125C)
Turn-on Delay Time
d(on) 8
t V = 400V
Current Rise Time
9
r CC
ns
V = 15V
t
Turn-off Delay Time GE
d(off) 100
I = 20A
t
C
Current Fall Time
f 60
R = 5
4 4 G
E
Turn-on Switching Energy 215
on1
T = +125C
55 J
E
J
Turn-on Switching Energy (Diode)
375
on2
6
E
Turn-off Switching Energy
395
off
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic UNIT
MIN TYP MAX
R
Junction to Case (IGBT) .72
JC
C/W
R
Junction to Case (DIODE) N/A
JC
W
Package Weight gm
1.9
T
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I includes both IGBT and FRED leakages
ces
3 See MIL-STD-750 Method 3471.
4 E is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
on1
adding to the IGBT turn-on loss. (See Figure 24.)
5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
on2
loss. (See Figures 21, 22.)
6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
off
APT Reser ves the right to chang e , without notice , the specifications and information contained herein.
052-6203 Rev E 6-2008