APT40GP60B APT40GP60S 600V POWER MOS 7 IGBT TO-247 3 D PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency C G G E switchmode power supplies. C E C Low Conduction Loss 100 kHz operation 400V, 41A Low Gate Charge 200 kHz operation 400V, 26A G Ultrafast Tail Current shutoff SSOA rated E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT40GP60B S UNIT V Collector-Emitter Voltage 600 CES Gate-Emitter Voltage V 20 Volts GE V 30 Gate-Emitter Voltage Transient GEM 7 I 100 Continuous Collector Current T = 25C C1 C I 62 Amps Continuous Collector Current T = 110C C2 C 1 I 160 Pulsed Collector Current T = 150C CM C SSOA Switching Safe Operating Area T = 150C 160A 600V J P 543 Watts Total Power Dissipation D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Collector-Emitter Breakdown Voltage (V = 0V, I = 250A) 600 CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) 3 4.5 6 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 40A, T = 25C) 2.2 2.7 GE C j V CE(ON) = 15V, I = 40A, T = 125C) Collector-Emitter On Voltage (V 2.1 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 250 CE GE j A I CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) 2500 CE GE j I Gate-Emitter Leakage Current (V = 20V) nA 100 GE GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT40GP60B S DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 4610 Capacitance ies C Output Capacitance V = 0V, V = 25V 395 pF oes GE CE C f = 1 MHz Reverse Transfer Capacitance 25 res V Gate-to-Emitter Plateau Voltage 7.5 V GEP Gate Charge 3 Q V = 15V Total Gate Charge GE 135 g V = 300V Q nC Gate-Emitter Charge CE 30 ge I = 40A C Q Gate-Collector Mille) Charge gc 40 SSOA Switching SOA T = 150C, R = 5, V = 160 A J G GE 15V, L = 100H,V = 600V CE t Turn-on Delay Time 20 Inductive Switching (25C) d(on) V (Peak) = 400V CC t Current Rise Time 29 r ns V = 15V GE t Turn-off Delay Time 64 d(off) I = 40A C t 45 Current Fall Time f R = 5 G 4 E Turn-on Switching Energy 385 on1 T = +25C J 5 E Turn-on Switching Energy (Diode) 644 J on2 6 E Turn-off Switching Energy 352 450 off t Turn-on Delay Time Inductive Switching (125C) 20 d(on) V (Peak) = 400V t CC Current Rise Time 29 r ns V = 15V GE t Turn-off Delay Time 89 d(off) I = 40A C t Current Fall Time 69 f R = 5 G 4 E Turn-on Switching Energy 385 on1 T = +125C J 5 Turn-on Switching Energy (Diode) E 972 on2 J 6 E Turn-off Switching Energy 615 950 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case (IGBT) .23 JC C/W R Junction to Case (DIODE) N/A JC W Package Weight 5.90 gm T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4E is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure24.) 5E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. A Combi device is used for the clamping diode as shown in the E test circuit. (See Figures 21, 22.) on2 6E is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7403 Rev D 2-2004