TO-247 TYPICAL PERFORMANCE CURVES APT50GN60BD SDQ2(G) APT50GN60BDQ2 APT50GN60SDQ2 APT50GN60BDQ2(G) APT50GN60SDQ2(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra (B) low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a 3 D PAK slightly positive V temperature coef cient. Low gate charge simpli es gate drive CE(ON) (S) design and minimizes losses. C G E G C 600V Field Stop E Trench Gate: Low V CE(on) Easy Paralleling C 6s Short Circuit Capability 175C Rated G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Parameter Symbol UNIT APT50GN60BD SDQ2(G) V Collector-Emitter Voltage 600 CES Volts V Gate-Emitter Voltage 30 GE 8 I Continuous Collector Current T = 25C 107 C1 C I Continuous Collector Current T = 110C 64 Amps C2 C 1 I Pulsed Collector Current T = 175C 150 CM C Switching Safe Operating Area T = 175C SSOA 150A 600V J P Total Power Dissipation Watts 366 D T ,T Operating and Storage Junction Temperature Range -55 to 175 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 4mA) 600 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 800A, T = 25C) 5.0 5.8 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 50A, T = 25C) 1.05 1.45 1.85 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 50A, T = 125C) 1.7 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 50 CE GE j I A CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) TBD CE GE j I Gate-Emitter Leakage Current (V = 20V) nA 600 GES GE R Intergrated Gate Resistor N/A G(int) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT50GN60BD SDQ2(G) Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance Capacitance 3200 ies C Output Capacitance pF V = 0V, V = 25V 125 oes GE CE C f = 1 MHz Reverse Transfer Capacitance 100 res Gate-to-Emitter Plateau Voltage V 9.0 V Gate Charge GEP 3 V = 15V Q Total Gate Charge 325 GE g V = 300V Q Gate-Emitter Charge 25 nC CE ge I = 50A Gate-Collector Mille) Charge Q C 175 gc 7 T = 175C, R = 4.3 , V = J G GE Switching Safe Operating Area SSOA A 150 15V, L = 100H,V = 600V CE V = 360V, V = 15V, CC GE s SCSOA Short Circuit Safe Operating Area 6 7 T = 150C, R = 4.3 J G t Inductive Switching (25C) 20 d(on) Turn-on Delay Time t V = 400V 25 Current Rise Time r CC ns t V = 15V 230 d(off) Turn-off Delay Time GE I = 50A t 100 Current Fall Time C f 7 R = 4.3 4 E G Turn-on Switching Energy 1185 on1 T = +25C 5 E J J Turn-on Switching Energy (Diode) 1275 on2 6 E 1565 Turn-off Switching Energy off t Inductive Switching (125C) Turn-on Delay Time 20 d(on) t V = 400V Current Rise Time 25 r CC ns t V = 15V Turn-off Delay Time d(off) 260 GE I = 50A t Current Fall Time C 140 f 7 R = 4.3 4 4 E G 1205 Turn-on Switching Energy on1 T = +125C 55 J E 1850 Turn-on Switching Energy (Diode) J on2 66 E 2125 Turn-off Switching Energy off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .41 JC C/W R Junction to Case (DIODE) .67 JC W gm Package Weight 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance, not including R nor gate driver impedance. (MIC4452) G G(int) 8 Continuous current limited by package lead temperature. Microsemi Reserves the right to change, without notice, the speci cations and information contained herein. 050-7613 Rev C 7-2009