T O-247 APT60GT60BRG APT60GT60SRG 600V (B) Thunderbolt IGBT 3 D PA K The Thunderbolt IGBT is a new generation of high voltage power IGBTs. (S) Using Non-Punch Through Technology the Thunderbolt IGBT offers superior C G E ruggedness and ultrafast switching speed. G C Low Forward Voltage Drop High Freq. Switching to 150KHz E Low Tail Current Ultra Low Leakage Current Avalanche Rated RBSOA and SCSOA Rated RoHS Compliant MAXMUM RATINGS Symbol Parameter APT60GT60BR SRG Unit V Collector-Emitter Voltage 600 CES Volts 20 V Gate Emitter Voltage GE 4 100 I Continuous Collector Current T = 25C C C1 60 I Continuous Collector Current T = 105C C C2 Amps 1 360 I Pulsed Collector Current T = 25C CM C 360 RBSOA Clamped Inductive Load Current R = 11 , T = 25C I G C LM 2 65 E Single Pulse Avalanche Energy mJ AS 500 P Total Power Dissipation Watts D -55 to 150 T , T Operating and Storage Junction Temperature Range J STG C 300 T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV 600 Collector-Emitter Breakdown Voltage (V = 0V, I = 0.5mA) CES GE C 345 V (TH) Gate Threshold Voltage (V = V , I = 500 A, T = 25C) GE CE GE C j Volts 1.6 2.2 2.5 Collector-Emitter On Voltage (V = 15V, I = I , T = 25C) V (ON) GE C C2 j CE 2.8 Collector-Emitter On Voltage (V = 15V, I = I , T = 125C) GE C C2 j 80 Collector Cut-off Current (V = V , V = 0V, T = 25C) CE CES GE j I A CES 2000 Collector Cut-off Current (V = V , V = 0V, T = 125C) CE CES GE j 100 I nA Gate-Emitter Leakage Current (V = 20V, V = 0V) GES GE CE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT60GT60BR SRG Test Conditions Symbol Characteristic MIN TYP MAX UNIT Capacitance Input Capacitance 3125 3590 C ies V = 0V GE pF Output Capacitance 310 450 C oes V = 25V CE f = 1 MHz Reverse Transfer Capacitance 180 310 C res Gate Charge 3 275 410 Q Total Gate Charge g V = 15V GE 19 30 nC Gate-Emitter Charge Q V = 0.5V ge CC CES Gate-Collector Mille) Charge I = I 120 180 Q C C2 gc Resistive Switching (25C) 20 40 Turn-on Delay Time t (on) d V = 15V GE Rise Time 95 190 t r V = 0.5V ns CC CES Turn-off Delay Time 315 470 t (off) I = I d C C2 R = 10 Fall Time 245 490 t G f Turn-on Delay Time 25 50 t (on) d Rise Time 59 120 t Inductive Switching (150C) r ns Turn-off Delay Time V (Peak) = 0.66V 430 650 t (off) CLAMP CES d V = 15V GE Fall Time 65 130 t f I = I C C2 Turn-on Switching Energy 1.6 3.2 E on R = 10 G Turn-off Switching Energy 2.4 4.8 mJ E T = +150C off J Total Switching Losses 4.0 8.0 E ts Turn-on Delay Time 26 50 t (on) Inductive Switching (25C) d Rise Time V (Peak) = 0.66V 63 125 t CLAMP CES r ns V = 15V GE Turn-off Delay Time 395 590 t (off) d I = I C C2 Fall Time 68 140 t f R = 5 G mJ Total Switching Losses 3.4 7.0 E T = +25C ts J Forward Transconductance 4 S gfe V = 20V, I = I CE C C2 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX Junction to Case 0.25 R JC C/W Junction to Ambient R 40 JA oz 0.22 Package Weight W T gm 6.1 lbin 10 Torque Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw) Nm 1.1 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 I = I , R = 25, L = 36 H, T = 25C C C2 GE j 3 See MIL-STD-750 Method 3471 4 The maximum current is limited by lead temperature. Microsemi Reserves the right to change, without notice, the speci cations and information contained herein. 052-6223 Rev F 3-2012