X-On Electronics has gained recognition as a prominent supplier of APT50GN60BG IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. APT50GN60BG IGBT Transistors are a product manufactured by Microchip. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

APT50GN60BG Microchip

APT50GN60BG electronic component of Microchip
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Part No.APT50GN60BG
Manufacturer: Microchip
Category: IGBT Transistors
Description: IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
Datasheet: APT50GN60BG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.1405 ea
Line Total: USD 4.14 
Availability - 4
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 4.1405

104
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 10.626
3 : USD 10.318
5 : USD 10.052
10 : USD 9.716
30 : USD 9.66

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Height
Length
Operating Temperature Range
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the APT50GN60BG from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT50GN60BG and other electronic components in the IGBT Transistors category and beyond.

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TO-247 TYPICAL PERFORMANCE CURVES APT50GN60B S(G) APT50GN60B APT50GN60S APT50GN60B(G) APT50GN60S(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra 3 low V and are ideal for low frequency applications that require absolute minimum D PAK CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a (S) slightly positive V temperature coef cient. Low gate charge simpli es gate drive CE(ON) C design and minimizes losses. G E G C E 600V Field Stop Trench Gate: Low V CE(on) Easy Paralleling C 6s Short Circuit Capability 175C Rated G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Parameter Symbol APT50GN60B(G) UNIT V Collector-Emitter Voltage 600 CES Volts V Gate-Emitter Voltage 30 GE 8 I Continuous Collector Current T = 25C 107 C1 C I Continuous Collector Current T = 110C 64 Amps C2 C 1 I Pulsed Collector Current T = 175C 150 CM C Switching Safe Operating Area T = 175C 150A 600V SSOA J P Total Power Dissipation 366 Watts D T ,T Operating and Storage Junction Temperature Range -55 to 175 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 4mA) 600 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 800A, T = 25C) 5.0 5.8 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 50A, T = 25C) 1.05 1.45 1.85 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 50A, T = 125C) 1.7 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 25 CE GE j I A CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) TBD CE GE j I Gate-Emitter Leakage Current (V = 20V) nA 600 GES GE R Intergrated Gate Resistor N/A G(int) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT50GN60B S(G) Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance Capacitance 3200 ies C Output Capacitance pF V = 0V, V = 25V 125 oes GE CE C f = 1 MHz Reverse Transfer Capacitance 100 res Gate-to-Emitter Plateau Voltage V 9.0 V Gate Charge GEP 3 V = 15V Q Total Gate Charge 325 GE g V = 300V Q Gate-Emitter Charge 25 nC CE ge I = 50A Gate-Collector Mille) Charge Q C 175 gc 7 T = 175C, R = 4.3 , V = J G GE Switching Safe Operating Area SSOA A 150 15V, L = 100H,V = 600V CE V = 360V, V = 15V, CC GE s SCSOA Short Circuit Safe Operating Area 6 7 T = 150C, R = 4.3 J G t Inductive Switching (25C) 20 d(on) Turn-on Delay Time t V = 400V 25 Current Rise Time r CC ns t V = 15V 230 d(off) Turn-off Delay Time GE I = 50A t 100 Current Fall Time C f 7 R = 4.3 4 E G Turn-on Switching Energy 1185 on1 T = +25C 5 E J J Turn-on Switching Energy (Diode) 1275 on2 6 E 1565 Turn-off Switching Energy off t Inductive Switching (125C) Turn-on Delay Time 20 d(on) t V = 400V Current Rise Time 25 r CC ns t V = 15V Turn-off Delay Time d(off) 260 GE I = 50A t Current Fall Time C 140 f 7 R = 4.3 4 4 E G 1205 Turn-on Switching Energy on1 T = +125C 55 J E 1850 Turn-on Switching Energy (Diode) J on2 66 E 2125 Turn-off Switching Energy off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .41 JC C/W R Junction to Case (DIODE) N/A JC W gm Package Weight 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance, not including R nor gate driver impedance. (MIC4452) G G(int) 8 Continuous current limited by package lead temperature. Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-7612 Rev C 7-2009

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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