STGWT60H65DFB STMicroelectronics

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage: V = 1.6 V (typ.) I = 60 A CE(sat) C TAB Tight parameter distribution Safe paralleling 3 2 1 Positive V temperature coefficient TO-3P CE(sat) Low thermal resistance Very fast soft recovery antiparallel diode Applications Photovoltaic inverters High-frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field- stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status link STGW60H65DFB STGWT60H65DFB STGWA60H65DFB DS9535 - Rev 8 - July 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE (1) Continuous collector current at T = 25 C 80 A C I C Continuous collector current at T = 100 C 60 A C (2)(3) I Pulsed collector current 240 A CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage (t 10 s) 30 V P (1) Continuous forward current at T = 25 C 80 A C I F Continuous forward current at T = 100 C 60 A C (2)(3) I Pulsed forward current 240 A FP P Total power dissipation at T = 25 C 375 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Current level is limited by bond wires. 2. Pulse width is limited by maximum junction temperature. 3. Defined by design, not subject to production test. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.4 C/W thJC R Thermal resistance junction-case diode 1.14 C/W thJC R Thermal resistance junction-ambient 50 C/W thJA DS9535 - Rev 8 page 2/21