STGW60V60F STMicroelectronics

STGW60V60F Datasheet Trench gate field-stop, 600 V, 60 A, very high speed, V series IGBT in a TO-247 package Features Maximum junction temperature: T = 175 C J Tail-less switching off V = 1.85 V (typ.) I = 60 A CE(sat) C Tight parameter distribution 3 2 Safe paralleling 1 Low thermal resistance TO-247 Applications C(2, TAB) Photovoltaic inverters Uninterruptible power supply Welding G(1) Power factor correction Very high frequency converters E(3) Description G1C2TE3 This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive V temperature CE(sat) coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGW60V60F Product summary Order code STGW60V60F Marking GW60V60F Package TO-247 Packing Tube DS9699 - Rev 4 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGW60V60F Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 600 V CES GE (1) Continuous collector current at T = 25 C 80 C I A C Continuous collector current at T = 100 C 60 C (2) I Pulsed collector current 240 A CP V Gate-emitter voltage 20 V GE P Total dissipation at T = 25 C 375 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Current level is limited by bond wires. 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.4 C/W thJC R Thermal resistance junction-ambient 50 C/W thJA DS9699 - Rev 4 page 2/15